NTE5563 NTE ELECTRONICS, NTE5563 Datasheet
NTE5563
Manufacturer Part Number
NTE5563
Description
SILICON CONTROLLED RECTIFIER,1.6kV V(DRM),550A I(T),TO-200var74
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5563.pdf
(2 pages)
Absolute Maximum Ratings: (T
Repetitive Peak Voltages, V
Non–Repetitive Peak Reverse Blocking Voltage,
Average On–State Current (Half Sine Wave), I
RMS On–State Current (T
Continuous On–State Current (T
Peak One–Cycle Surge (10ms duration, 60% V
Non–Repetitive On–State Current (10ms duration, V
Maximum Permissible Surge Energy (V
Peak Forward Gate Current (Anode positive with respect to cathode), I
Peak Forward Gate Voltage (Anode positive with respect to cathode), V
Peak Reverse Gate Voltage, V
Average Gate Power, P
Peak Gate Power (100 s pulse width), P
Rate of Rise of Off–State Voltage (To 80% V
Rate of Rise of On–State Current, di/dt
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Heatsink, R
Peak On–State Voltage (I
Forward Conduction Threshold Voltage, V
Forward Conduction Slope Resistance, r
T
T
10ms duration
3ms duration
(Gate drive 20V, 20
(For a device with a maximum forward voltage drop characteristic)
hs
hs
Repetitive
Non–Repetitive
Double Side Cooled
Single Side Cooled
= +55 C (Double Side Cooled)
= +85 C (Single Side Cooled)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
Silicon Controlled Rectifier (SCR)
TM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
with t
= +25 C, Double Side Cooled), I
= 2550A), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RGM
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, V
hs
hs
J
r
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C, Double Side Cooled), I
= +125 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1 s, anode voltage
, V
R
GM
TM
DSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1880 Amp
O
NTE5563
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
th(j–hs)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T(AV)
RRM
gate open–circuit), dv/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
t
re–applied), I
R
10V), I
80% V
T(RMS)
TSM (2)
TSM (1)
DRM
T
. . . . . . . . . . . . . . . . . . . .
)
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . .
FGM
FGM
. . . . . . . . . . . . . . .
. . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
–40 to +125 C
–40 to +150 C
2500000A
1890000A
0.03 C/W
0.06 C/W
1000A/ s
0.174m
200V/ s
500A/ s
20500A
22550A
0.965V
1600V
1700V
1400A
2840A
2400A
120W
1.41V
550A
20A
22V
4W
5V
2
2
s
s
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NTE5563 Summary of contents
Page 1
... Storage Temperature Range, T Thermal Resistance, Junction–to–Heatsink, R (For a device with a maximum forward voltage drop characteristic) Double Side Cooled Single Side Cooled Peak On–State Voltage (I TM Forward Conduction Threshold Voltage, V Forward Conduction Slope Resistance, r NTE5563 1880 Amp = +125 C unless otherwise specified RRM DRM DSM ...
Page 2
Absolute Maximum Ratings (Cont’d): (T Repetitive Peak Off–State Current (At V Repetitive Peak Reverse Current (At V Maximum Gate Current (V A Maximum Gate Voltage (V A Maximum Holding Current (V Maximum Gate Voltage Which Will Not Trigger Any Device, ...