IRFU9120PBF Vishay, IRFU9120PBF Datasheet - Page 2
![P CHANNEL MOSFET, -100V, 5.6A, IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
IRFU9120PBF
Manufacturer Part Number
IRFU9120PBF
Description
P CHANNEL MOSFET, -100V, 5.6A, IPAK
Manufacturer
Vishay
Specifications of IRFU9120PBF
Transistor Polarity
P Channel
Continuous Drain Current Id
-5.6A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
600mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.48 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.6 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU9120PBF
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
ΔV
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
T
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
V
= 25 °C, I
R
T
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= - 10 V
= - 10 V
g
= 25 °C, I
= 18 Ω, R
MIN.
= - 80 V, V
V
V
V
V
-
-
-
V
DD
DS
f = 1.0 MHz, see fig. 5
DS
DS
GS
TEST CONDITIONS
= - 50 V, I
F
= - 50 V, I
= V
= - 100 V, V
= 0 V, I
= - 6.8 A, dI/dt = 100 A/μs
V
V
V
GS
DS
S
D
GS
I
D
GS
= - 5.6 A, V
GS
= 7.1 Ω, see fig. 10
, I
= - 25 V,
= - 6.8 A, V
= ± 20 V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
= - 250 μA
= - 250 μA
D
D
I
D
= - 6.8 A,
= - 3.4 A
GS
= - 3.4 A
D
TYP.
= - 1 mA
= 0 V
J
GS
-
-
-
= 125 °C
DS
G
G
= 0 V
= - 80 V,
b
D
S
b
b
b
D
S
b
- 100
MIN.
- 2.0
1.5
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
3.0
50
S10-1135-Rev. B, 10-May-10
Document Number: 91280
- 0.098
TYP.
0.33
390
170
100
9.6
4.5
7.5
45
29
21
25
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
- 100
- 500
- 4.0
0.60
- 5.6
- 6.3
0.66
- 22
200
3.0
9.0
S
18
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns
Ω
S
A
V
V
V