BUK6209-30C NXP Semiconductors, BUK6209-30C Datasheet - Page 9

• Manufacturer Part Number: BUK6209-30C
• Description: MOSFET,N CH,30V,46A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6209-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6209-30C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-2
V
V
V
GS(pl)
DS
GS(th)
GS
10
Q
GS1
-1
I
Q
D
GS
Q
GS2
1
Q
G(tot)
Q
GD
10
All information provided in this document is subject to legal disclaimers.
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DS
C
C
C
(V)
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iss
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Rev. 2 — 1 October 2010
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
100
V
(A)
(V)
N-channel TrenchMOS intermediate level FET
I
10
80
60
40
20
GS
S
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
T
V
j
DS
= 175 ° C
0.5
10
= 14V
BUK6209-30C
20
1
T
j
24V
= 25 ° C
1.5
30
© NXP B.V. 2010. All rights reserved.
Q
003aae792
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V
G
SD
(nC)
(V)
40
2
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