BUK6209-30C NXP Semiconductors, BUK6209-30C Datasheet - Page 8

• Manufacturer Part Number: BUK6209-30C
• Description: MOSFET,N CH,30V,46A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6209-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6209-30C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
V
(m Ω )
R
GS(th)
(V)
DSon
50
40
30
20
10
4
3
2
1
0
0
-60
junction temperature
of drain current; typical values
Gate-source threshold voltage as a function of
0
V
GS
(V) = 3.6
0
20
3.8
max
min
typ
60
4.0
40
120
All information provided in this document is subject to legal disclaimers.
003aae790
I
003aad805
D
T
(A)
j
10.0
(°C)
4.5
6.0
5.0
180
60
Rev. 2 — 1 October 2010
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
D
10
10
10
10
10
a
1.5
0.5
N-channel TrenchMOS intermediate level FET
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
1
min
BUK6209-30C
60
2
typ
max
120
3
© NXP B.V. 2010. All rights reserved.
003aad806
V
T
GS
j
( ° C)
03aa27
(V)
180
4
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