FDD6692 Fairchild Semiconductor, FDD6692 Datasheet - Page 160
FDD6692
Manufacturer Part Number
FDD6692
Description
N CHANNEL MOSFET, 30V, 54A
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDD6692.pdf
(214 pages)
Specifications of FDD6692
Transistor Polarity
N Channel
Continuous Drain Current Id
54A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
57W
Current Rating
54A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
- Current page: 160 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Transient Voltage Suppressors (Continued)
SMBJ100CA
SMBJ110A
SMBJ110CA
SMBJ120A
SMBJ120CA
SMBJ130A
SMBJ130CA
SMBJ150A
SMBJ150CA
SMBJ160A
SMBJ160CA
SMBJ170A
SMBJ170CA
SMC
SMCJ5V0A
SMCJ5V0CA
SMCJ6V0A
SMCJ6V0CA
SMCJ6V5A
SMCJ6V5CA
SMCJ7V0A
SMCJ7V0CA
SMCJ7V5A
SMCJ7V5CA
SMCJ8V0A
SMCJ8V0CA
SMCJ8V5A
SMCJ8V5CA
SMCJ9V0A
SMCJ9V0CA
SMCJ10A
SMCJ10CA
SMCJ11A
SMCJ11CA
SMCJ12A
Products
Voltage (V)
Stand-off
Reverse
V
100
110
110
120
120
130
130
150
150
160
160
170
170
RWM
6.5
6.5
7.5
7.5
8.5
8.5
10
10
11
11
12
5
5
6
6
7
7
8
8
9
9
V
Min
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
11.1
11.1
12.2
12.2
13.3
111
122
122
133
133
144
144
167
167
178
178
189
189
6.4
6.4
10
10
BR
Voltage (V)
Breakdown
Max
7.37
7.37
7.98
7.98
9.21
9.21
9.83
9.83
10.4
10.4
11.1
11.1
12.3
12.3
13.5
13.5
14.7
123
135
135
147
147
159
159
185
185
197
197
209
209
8.6
8.6
7
7
Condition
I
T
Test
(mA)
10
10
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
2-155
10.3
10.3
11.2
11.2
12.9
12.9
13.6
13.6
14.4
14.4
15.4
15.4
18.2
18.2
19.9
162
177
177
193
193
209
209
243
243
259
259
275
275
9.2
9.2
V
12
17
12
17
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
145.6
145.6
133.9
133.9
116.3
116.3
110.3
110.3
104.2
104.2
I
97.4
97.4
88.2
88.2
82.4
82.4
75.3
163
163
125
125
PPM
3.7
3.4
3.1
2.9
2.5
2.3
2.2
3.4
3.1
2.9
2.5
2.3
2.2
Leakage @ V
I
R
Max Reverse
1000
2000
1000
2000
1000
(µA)
500
200
400
100
200
100
50
20
40
10
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
RWM
Diodes and Rectifiers
P
PPM
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
600
600
600
600
600
600
600
600
600
600
600
600
600
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction
Related parts for FDD6692
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: