IRFBE20PBF Vishay, IRFBE20PBF Datasheet - Page 7
IRFBE20PBF
Manufacturer Part Number
IRFBE20PBF
Description
N CHANNEL MOSFET, 800V, 1.8A TO-220
Manufacturer
Vishay
Specifications of IRFBE20PBF
Transistor Polarity
N Channel
Continuous Drain Current Id
1.8A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
6.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
530pF @ 25V
Power - Max
54W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
6.5 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
54000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
27 ns
Rise Time
17 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBE20PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBE20PBF
Manufacturer:
IR
Quantity:
160
Part Number:
IRFBE20PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 91117
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
GS
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
Diode Recovery
SD
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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