SI4943BDY-T1-GE3 Vishay, SI4943BDY-T1-GE3 Datasheet - Page 2
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SI4943BDY-T1-GE3
Manufacturer Part Number
SI4943BDY-T1-GE3
Description
DUAL P CHANNEL MOSFET, -20V, 8.4A
Manufacturer
Vishay
Datasheet
1.SI4943BDY-T1-E3.pdf
(6 pages)
Specifications of SI4943BDY-T1-GE3
Transistor Polarity
P Channel
Continuous Drain Current Id
-8.4A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4943BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4943BDY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
30
24
18
12
6
0
0
V
1
a
a
V
GS
DS
4 V
Output Characteristics
= 10 V thru 5 V
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
2
a
Symbol
R
V
3
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
3 V
4
V
V
I
DS
D
DS
≅ - 1 A, V
I
= - 10 V, V
F
= - 20 V, V
V
V
V
V
V
V
V
V
= - 1.7 A, dI/dt = 100 A/µs
GS
I
DS
DS
5
GS
DS
DS
S
DD
DS
= - 1.7 A, V
Test Conditions
= V
= - 5 V, V
= - 4.5 V, I
= - 10 V, I
= - 10 V, I
= 0 V, V
= - 20 V, V
= - 10 V, R
GEN
f = 1 MHz
GS
GS
GS
, I
= - 10 V, R
= - 5 V, I
D
GS
= 0 V, T
GS
= - 250 µA
D
D
D
GS
GS
L
= ± 20 V
= - 8.4 A
= - 8.4 A
= - 6.7 A
= - 10 V
= 10 Ω
= 0 V
= 0 V
D
J
= 55 °C
= - 8.4 A
g
= 6 Ω
30
24
18
12
6
0
0.0
0.5
Min.
- 30
1.0
2.4
- 1
V
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
1.5
25 °C
- 0.75
0.016
0.026
Typ.
2.0
6.7
20
17
12
11
10
94
60
55
5
T
S09-0704-Rev. C, 27-Apr-09
C
Document Number: 73073
= 125 °C
2.5
± 100
3.0
0.019
0.031
Max.
- 1.2
140
- 3
- 1
- 5
25
18
17
15
90
80
- 55 °C
3.5
4.0
Unit
nC
nA
µA
ns
Ω
V
Ω
V
A
S
4.5