SI9933CDY-T1-E3 Vishay, SI9933CDY-T1-E3 Datasheet - Page 6
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SI9933CDY-T1-E3
Manufacturer Part Number
SI9933CDY-T1-E3
Description
DUAL P CHANNEL MOSFET, -20V, SOIC
Manufacturer
Vishay
Datasheet
1.SI9933CDY-T1-GE3.pdf
(7 pages)
Specifications of SI9933CDY-T1-E3
Transistor Polarity
P Channel
Continuous Drain Current Id
-4A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
94mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-1.4V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.058 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9933CDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
http://www.vishay.com/ppg?68791.
1
10
10
0.05
-4
-4
0.02
0.1
0.02
0.05
0.2
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
Single Pulse
10
-3
10
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
S-81729-Rev. A, 04-Aug-08
t
2
Document Number: 68791
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 90 °C/W
1000
10