SI9933CDY-T1-E3 Vishay, SI9933CDY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI9933CDY-T1-E3
• Description: DUAL P CHANNEL MOSFET, -20V, SOIC
• Manufacturer: Vishay

Specifications of SI9933CDY-T1-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.4V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.058 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
http://www.vishay.com/ppg?68791.
1
10
10
0.05
-4
-4
0.02
0.1
0.02
0.05
0.2
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
Single Pulse
10
-3
10
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
S-81729-Rev. A, 04-Aug-08
t
2
Document Number: 68791
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 90 °C/W
1000
10