SI9933CDY-T1-E3 Vishay, SI9933CDY-T1-E3 Datasheet - Page 3
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SI9933CDY-T1-E3
Manufacturer Part Number
SI9933CDY-T1-E3
Description
DUAL P CHANNEL MOSFET, -20V, SOIC
Manufacturer
Vishay
Datasheet
1.SI9933CDY-T1-GE3.pdf
(7 pages)
Specifications of SI9933CDY-T1-E3
Transistor Polarity
P Channel
Continuous Drain Current Id
-4A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
94mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-1.4V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.058 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9933CDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
0.16
0.12
0.08
0.04
0.00
10
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
4
0
0
0
0
I
D
V
= 4.8 A
GS
3
1
V
= 2.5 V
DS
5
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
6
V
Gate Charge
- Drain Current (A)
GS
V
2
DS
= 5 thru 3.5 V
V
GS
= 10 V
10
9
= 4.5 V
V
DS
3
12
= 16 V
15
V
V
V
GS
V
GS
4
15
GS
GS
= 1.5 V
= 2.5 V
= 3 V
= 2 V
New Product
18
20
5
1200
900
600
300
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0.0
0
I
C
D
On-Resistance vs. Junction Temperature
rss
- 25
= 20 A
C
0.5
4
oss
V
V
Transfer Characteristics
GS
DS
T
0
J
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
iss
- Drain-to-Source Voltage (V)
T
V
C
GS
25
= 125 °C
1.0
Capacitance
8
T
= - 4.5 V; I
C
= 25 °C
50
V
GS
Vishay Siliconix
1.5
12
D
= - 2.5 V; I
75
= - 4.8 A
Si9933CDY
100
T
C
www.vishay.com
2.0
16
= - 55 °C
D
= - 3.8 A
125
150
2.5
20
3