SI5513DC-T1-E3 Vishay, SI5513DC-T1-E3 Datasheet - Page 5
![DUAL N/P CHANNEL MOSFET, 20V, 1206](/photos/5/42/54244/pkg_5547_sml.jpg)
SI5513DC-T1-E3
Manufacturer Part Number
SI5513DC-T1-E3
Description
DUAL N/P CHANNEL MOSFET, 20V, 1206
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI5513DC-T1-E3.pdf
(8 pages)
Specifications of SI5513DC-T1-E3
Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
4.2A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
4.5V
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 3.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.1A, 2.1A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.075 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.1 A @ N Channel or 2.1 A @ P Channel
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI5513DC-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI5513DC-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
38 645
Company:
Part Number:
SI5513DC-T1-E3
Manufacturer:
SST
Quantity:
2 405
Part Number:
SI5513DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71186
S10-0547-Rev. G, 08-Mar-10
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.01
0.0
0.1
0
2
1
10
V
GS
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
V
0.5
= 5 V thru 4 V
On-Resistance vs. Drain Current
GS
2
V
Single Pulse
= 2.5 V
DS
Output Characteristics
- Drain-to-Source Voltage (V)
1.0
I
D
- Drain Current (A)
4
1.5
10
V
GS
-3
6
= 3.6 V
Normalized Thermal Transient Impedance, Junction-to-Foot
2.0
3.5 V
2.5 V
1.5 V
V
3 V
2 V
GS
8
2.5
= 4.5 V
3.0
Square Wave Pulse Duration (s)
10
10
-2
600
500
400
300
200
100
10
10
8
6
4
2
0
0
-1
0.0
0
C
rss
0.5
4
V
V
1.0
GS
Transfer Characteristics
DS
C
C
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
iss
1.5
Capacitance
8
1
2.0
Vishay Siliconix
T
25 °C
C
12
= - 55 °C
2.5
Si5513DC
www.vishay.com
3.0
16
125 °C
3.5
10
4.0
20
5