SKIM909GD066HD SEMIKRON, SKIM909GD066HD Datasheet - Page 2

• Manufacturer Part Number: SKIM909GD066HD
• Description: IGBT Module
• Manufacturer: SEMIKRON

Specifications of SKIM909GD066HD

• Dc Collector Current: 899A
• Collector Emitter Voltage Vces: 600V
• Collector Emitter Voltage V(br)ceo: 900mV
• No. Of Pins: 33
• Package / Case: SKiM 93
• Family/system: SKiM 63\/93
• Voltage (v): 600
• Current (a): 900
• Chip-type: IGBT 3 (Trench)
• Case: SKIM 93
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SKiM909GD066HD
Trench IGBT Modules
SKiM909GD066HD
Features
• IGBT 3 Trench Gate Technology
• Solderless sinter technology
• V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• High short circuit capability, self
• Integrated temperature sensor
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
2
SKiM
coefficient
Bonded) ceramic substrate
thermal contacts and electrical
contacts
limiting to 6 x I
CE(sat)
with positive temperature
®
93
2
O
C
GD
3
DCB (Direct Copper
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
M
M
w
Temperature sensor
R
B
F
RRM
CE
F
F0
rr
100/125
th(j-s)
CC'+EE'
100
rr
s
t
= V
EC
Rev. 2 – 05.10.2009
I
V
chip
I
di/dt
V
V
terminal-chip
Conditions
per diode
to heat sink (M4)
T
R
T[K];
F
F
GE
GE
CC
Sensor
(T)
= 900 A
= 900 A
off
= R
= 0 V
= -15 V
= 300 V
= 4800 A/µs
= 100 °C (R
100
exp[B
100/125
25
T
T
T
T
T
T
T
T
T
T
T
to terminals (M6)
= 5 kΩ)
j
j
j
j
j
j
j
j
j
s
s
(1/T-1/373)];
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 125 °C
min.
2.5
3
4096
typ.
0.85
500
118
339
1.6
1.7
0.7
0.9
0.3
0.5
29
10
1
© by SEMIKRON
0.135
max.
1100
0.95
1.8
1.9
1.1
0.8
1.1
15
4
5
Unit
K/W
mΩ
mΩ
mΩ
mΩ
Nm
Nm
Nm
µC
mJ
nH
Ω
V
V
V
V
A
g
K