FS200R12PT4 Infineon Technologies, FS200R12PT4 Datasheet - Page 7

• Manufacturer Part Number: FS200R12PT4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FS200R12PT4

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 1kW
• No. Of Pins: 20
• Collector Emitter Saturation Voltage Vce(sat): 1.75V
• Rohs Compliant: Yes
• Ic (max): 200.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: sixpack
• Technology: IGBT4
• Housing: EconoPACK™ 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
: 4
: 4
;^\o + M,mO
;^\o + M,mO
3
3
•FWh( + M O
•FWh( + M O
: 4
: 4
;^\o + M,mO
;^\o + M,mO
3
3
•FWh( + M O
•FWh( + M O
5
5
5
5
U.- +
U.- +
U.- +
U.- +
0,001
0,01
0,1
4 %
4 %
4 %
4 %
30
25
20
15
10
5
0
1
0,001
0
4 4 4 4
[R #() + "
[R #() + "
[R #() + "
[R #() + "
P$
P$
P$
P$
50
&
&
&
&
;^\oR 3>? +
;^\oR 3>? +
•FWh( &
0,01
100 150 200 250 300 350 400
5
5
5
5
P
P
P
P
#
#
#
#
Zv 'Px
Zv x
4
4
4
4
Q8
Q8
,m v0x
&
&
&
&
0,1
M
M
R
R
M
M
M
M
M
M
v x
"
R K K
R
FS200R12PT4
P
P
P
P
O
O
O
O
4O
4O
4O
4O
4
4
!
4
4
R K!
R
1
R S
R
10
7
: 4
: 4
: 4
: 4
;^\o + M UO
;^\o + M UO
;^\o + M UO
;^\o + M UO
,m +
,m +
,m +
,m +
B38 3
B38 3
B38 3
B38 3
B38
B38
B38
B38
5
5
100000
5
5
10000
+ M3O
+ M3O
+ M3O
+ M3O
1000
100
4 %
4 %
4 %
4 %
20
18
16
14
12
10
8
6
4
2
0
0
0
0R #() + "
0R #() + "
0R #() + "
0R #() + "
1
20
&
&
&
&
;^\oR 3>? +
;^\oR 3>? +
F‚@
2
<
<
<
<
4
4
4
4
40
3
P
P
P
P
#
#
#
#
4
60
4
4
4
4
M
M
M
M
Q8
Q8
3( vQ8x
5
M
M
M
M
U v[x
80
M
M
M
M
M
M
M
M
Vorläufige Daten
preliminary data
4O
4O
4O
4O
6
100 120 140 160
7
O
O
O
O
4O
4O
4O
4O
O
O
O
O
8
9 10 11