NTHS0603N01N6802JE Vishay, NTHS0603N01N6802JE Datasheet - Page 73
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NTHS0603N01N6802JE
Manufacturer Part Number
NTHS0603N01N6802JE
Description
THERMISTOR NTC 68K OHM 5% 0603
Manufacturer
Vishay
Series
NTHSr
Type
NTCr
Datasheets
1.S29GL032N90TFI010.pdf
(81 pages)
2.NTHS0603N02N1002KE.pdf
(3 pages)
3.NTHS0603N01N6802JE.pdf
(3 pages)
Specifications of NTHS0603N01N6802JE
Resistance In Ohms @ 25°c
68K
Resistance Tolerance
±5%
B Value Tolerance
±3%
B25/75
3964K
Mounting Type
Surface Mount
Package / Case
0603 (1608 Metric)
Description Of Terminals
Leadless
Mounting Style
Surface Mount
Pin Count
2
Screening Level
Automotive
Sensitivity Index
3964K
Resistance @ 25c
68kohm
Percentage Of Resistance Tolerance @ 25c
±5
Accuracy
±3
Operating Temperature Min Deg. C
-40C
Operating Temperature Max Deg. C
125C
Product Length (mm)
1.6mm
Product Depth (mm)
0.8mm
Lead Free Status / RoHS Status
Lead free by exemption / RoHS Compliant
B0/50
-
B25/50
-
B25/85
-
B25/100
-
Operating Temperature
-
Power - Max
-
Lead Length
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
541-1104-2
NTHS0603N01N6802JE
NTHS0603N01N6802JE
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTHS0603N01N6802JE
Manufacturer:
VISHAY/威世
Quantity:
20 000
16. Erase And Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25°C, V
2. Under worst case conditions of 90
3. Programming time (typ) is 15 μs (per word), 7.5 μs (per byte).
4. Accelerated programming time (typ) is 12.5 μs (per word), 6.3 μs (per byte).
5. Write buffer Programming time is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See
Notes
1. Sampled, not 100% tested.
2. Test conditions T
October 29, 2008 S29GL-N_01_12
Sector Erase Time
Chip Erase Time
Total Write Buffer Program Time (Notes 3, 5)
Total Accelerated Effective Write Buffer Program Time (Notes 4, 5)
Chip Program Time
on page 53
Parameter Symbol
C
C
C
C
for further information on command definitions.
OUT
IN2
IN3
IN
A
= 25°C, f = 1.0 MHz.
Parameter
#RESET, WP#/ACC Pin Capacitance
°
C; Worst case V
Parameter Description
Control Pin Capacitance
Output Capacitance
Input Capacitance
Table 16.1 TSOP Pin and BGA Package Capacitance
CC
D a t a
, 100,000 cycles.
S29GL-N MirrorBit
S29GL032N
S29GL064N
S29GL032N
S29GL064N
S h e e t
CC
= 3.0V, 10,000 cycles; checkerboard data pattern.
Typ
®
V
Flash Family
V
V
V
OUT
IN
IN
IN
31.5
(Note 1)
240
200
0.5
32
64
63
= 0
= 0
= 0
= 0
Test Setup
(Note 2)
TSOP
TSOP
TSOP
TSOP
Max
128
3.5
BGA
BGA
BGA
BGA
64
Table 10.1 on page 51
Unit
sec
sec
µs
TBD
TBD
TBD
TBD
Typ
27
6
6
6
programming prior
and
Excludes system
level overhead
Excludes 00h
Comments
Max
TBD
TBD
TBD
TBD
Table 10.3
to erasure
10
12
10
30
(Note 6)
(Note 7)
Unit
pF
pF
pF
pF
pF
pF
pF
pF
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