DG2020DV-T1-E3 Vishay, DG2020DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: DG2020DV-T1-E3
• Description: IC,ANALOG SWITCH,SINGLE,SPDT,CMOS,TSOP,6PIN,PLASTIC
• Manufacturer: Vishay

Specifications of DG2020DV-T1-E3

• Rohs Compliant: YES
• Number Of Switches: Single
• Switch Configuration: SPDT
• On Resistance (max): 3.2 Ohms
• On Time (max): 10000 ns
• Off Time (max): 5000 ns
• Off Isolation (typ): - 53 dB
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Supply Current: 0.0002 mA
• Maximum Power Dissipation: 570 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Minimum Operating Temperature: - 40 C
• Off State Leakage Current (max): +/- 60 nA
• Switch Current (typ): 50 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
a.
b.
c.
d.
e.
f.
Document Number: 71676
S-04456—Rev. A, 03-Aug-01
Analog Switch
Analog Signal Range
On-Resistance
r
Switch Off Leakage Current
Channel-On Leakage Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
Off-Isolation
Crosstalk
Source-Off Capacitance
Channel-On Capacitance
Power Supply
Power Supply Range
Power Supply Current
Power Consumption
ON
Room = 25 C, Full = as determined by the operating suffix.
Typical values are for design aid only, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guarantee by design, nor subjected to production test.
V
Guaranteed by 5-V leakage testing, not production tested.
Flatness
IN
= input voltage to perform proper function.
d
Parameter
d
d
d
d
d
d
Symbol
V
I
Flatness
INL
t
t
I
I
r
r
r
t
C
C
C
NO
I
t
OFF
OFF
C
COM(off)
COM(on)
I
ON
ON
ON
ON(NO)
NO(off)
ON
V
X
NC(off)
OIRR
Q
NO(off)
V
NC(off)
NO(on)
NC(on)
V
TALK
COM
C
V+
P
or I
I+
, V
INH
INL
t
(
(
(
INJ
(
d
in
(
(
C
NO)
NO)
NC)
NC)
NO)
NC)
NC
INH
,
,
V+ = 4.5 V, V
V+ = 4.5 V, V
V
V
V+ = 5.5 V, V
V
NO
NO
Otherwise Unless Specified
NO
V+ = 5 V, "10%, V
C
or V
or V
L
R
, V
= 1 nF, V
L
NC
= 50 W, C
NC
NC
V
Test Conditions
IN
COM
= 1 V/4.5 V, V
New Product
= 3 V, R
= 3 V, R
COM
= 0 or V+, f = 1 MHz
NO
W
V
V
= 0 to V+, I
V+ = 5.5 V
V+ = 5.5 V
GEN
IN
IN
, V
= 3 V, I
L
= 0 or V+
= 0 or V+
NC
= 5 pF, f = 1 MHz
L
L
= 0 V, R
= 300 W, C
= 300 W, C
IN
= V
= 0.8 or 2.4 V
NO
COM
COM
NO
, I
W
GEN
NC
, I
= 4.5 V/1 V
= 1 V/4.5 V
NC
= 100 mA
L
L
= 0 W
= 35 pF
= 35 pF
= 100 mA
e
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
a
Min
–5.3
–5.3
–5.3
–98
–98
–98
2.4
0.3
4.5
0
1
b
–40 to 85_C
Vishay Siliconix
Limits
Typ
0.13
–53
–54
0.8
0.9
1.2
1.3
3.5
1.5
0.2
65
32
90
95
3
2
1
1
5
c
Max
DG2020
1.1
1.2
1.6
1.7
5.3
5.3
5.3
0.8
6.5
5.5
4.5
3.5
5.5
1.0
5.5
V+
98
98
98
1
6
5
4
3
www.vishay.com
b
Unit
mW
pC
nA
pF
mA
dB
pF
mA
ms
W
V
V
V
3