DG2020DV-T1-E3 Vishay, DG2020DV-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: DG2020DV-T1-E3
• Description: IC,ANALOG SWITCH,SINGLE,SPDT,CMOS,TSOP,6PIN,PLASTIC
• Manufacturer: Vishay

Specifications of DG2020DV-T1-E3

• Rohs Compliant: YES
• Number Of Switches: Single
• Switch Configuration: SPDT
• On Resistance (max): 3.2 Ohms
• On Time (max): 10000 ns
• Off Time (max): 5000 ns
• Off Isolation (typ): - 53 dB
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Supply Current: 0.0002 mA
• Maximum Power Dissipation: 570 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Minimum Operating Temperature: - 40 C
• Off State Leakage Current (max): +/- 60 nA
• Switch Current (typ): 50 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DG2020
Vishay Siliconix
Reference to GND
V+
IN, COM, NC, NO
Continuous Current (Any terminal)
Peak Current
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
www.vishay.com
2
Analog Switch
Analog Signal Range
On-Resistance
r
Switch Off Leakage Current
Channel-On Leakage Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
Off-Isolation
Crosstalk
N
Channel-On Capacitance
Power Supply
Power Supply Range
Power Supply Current
Power Consumption
ON
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, N
Flatness
C
Off Capacitance
d
d
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter
d
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
d
d
d
f
f
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
I
Flatness
INL
I
I
t
t
C
NO
r
r
r
I
t
t
C
C
C
COM(off)
COM(on)
OFF(NO)
OFF(NC)
I
ON(NO)
ON(NO)
ON(NC)
ON(NO)
NO(off)
ON(NC)
X
V
OIRR
NC(off)
V
Q
NO(off)
NC(off)
NO(on)
V
NC(on)
COM
TALK
V+
P
C
or I
, V
t
I+
INH
INL
INJ
d
in
C
NC
INH
,
,
-0.3 to (V+ + 0.3 V)
V+ = 2.7 V, V
V
V
NO
NO
V+ = 3.3 V, V
Otherwise Unless Specified
-65 to 125 C
V+ = 3 V, "10%, V
-0.3 to +6 V
V
C
or V
or V
"200 mA
COM
L
R
V+ = 3.3 V, V
V+ = 3.3 V, V
"50 mA
= 1 nF, V
L
NC
NC
= 50 W, C
New Product
V
Test Conditions
= 0 to V+, I
IN
= 2.0 V, R
= 2.0 V, R
COM
= 0 or V+, f = 1 MHz
V
W
NO
V
V
COM
GEN
V+ = 2.7 V
IN
IN
= 1.5 V, I
, V
L
NO
NO
= 0 or V+
= 0 or V+
= 3 V/1 V
= 5 pF, f = 1 MHz
NC
= 0 V, R
NO
L
L
, V
, V
IN
= 300 W, C
= 300 W, C
= V
, I
NC
NC
Power Dissipation (Packages)
TSOP-6
Notes:
a.
b.
c.
= 0.4 or 2.0 V
NC
NO
COM
= 1 V/3 V
= 1 V/3 V
GEN
, I
= 100 mA
W
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 7.0 mW/_C above 25_C
NC
= 1 V/3 V
c
= 0 W
= 100 mA
L
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 35 pF
= 35 pF
e
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
a
b
Min
–2.3
–2.3
–2.3
–60
–60
–60
2.7
0
2
1
1
b
–40 to 85_C
Limits
Typ
0.42
–52
–53
1.4
1.5
2.2
2.3
3.7
0.2
75
34
88
95
S-04456—Rev. A, 03-Aug-01
6
5
2
2
3
1
Document Number: 71676
c
Max
2.0
2.1
3.2
3.3
2.3
2.3
2.3
0.4
5.5
4.5
3.3
1.0
3.3
V+
60
60
60
10
11
1
7
8
5
4
b
570 mW
Unit
mW
nA
pF
mA
pC
dB
pF
mA
ms
V
W
V
V