AUIRL3705ZS International Rectifier, AUIRL3705ZS Datasheet - Page 6

• Manufacturer Part Number: AUIRL3705ZS
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRL3705ZS

• Input Capacitance (ciss) @ Vds: 2880pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 52A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 86A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0065ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 130W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 8 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 86 A
• Power Dissipation: 130 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
100
90
80
70
60
50
40
30
20
10
0
Fig 9. Maximum Drain Current vs.
25
0.001
0.01
0.1
10
1
1E-006
50
Case Temperature
D = 0.50
T C , Case Temperature (°C)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.02
0.20
0.01
0.10
0.05
75
Limited By Package
100
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
125
150
t 1 , Rectangular Pulse Duration (sec)
175
0.0001
J
J
1
Ci= i Ri
1
Ci
2.0
1.5
1.0
0.5
i Ri
R
-60 -40 -20 0
0.001
1
R
1
I D = 43A
V GS = 5.0V
2
R
Fig 10. Normalized On-Resistance
2
2
T J , Junction Temperature (°C)
R
2
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
20 40 60 80 100 120 140 160 180
vs. Temperature
Ri (°C/W)
0.5413
0.5985
0.01
0.000384
0.002778
i (sec)
0.1
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