AUIRL3705ZS International Rectifier, AUIRL3705ZS Datasheet - Page 2

• Manufacturer Part Number: AUIRL3705ZS
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRL3705ZS

• Input Capacitance (ciss) @ Vds: 2880pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 52A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 86A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0065ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 130W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 8 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 86 A
• Power Dissipation: 130 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

 Repetitive rating; pulse width limited by
‚ Limited by T
ƒ Pulse width
„ C
…
†
Notes:
Static Electrical Characteristics @ T
V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
V
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
C
R
(BR)DSS
max. junction temperature. (See fig. 11).
above this value.
oss
Limited by T
This value determined from sample failure population. 100%
oss
tested to this value in production.
G
eff.
avalanche performance.
= 25 , I
eff. is a fixed capacitance that gives the same charging time as
while V
/ T
J
AS
DS
Jmax
Jmax
1.0ms; duty cycle
= 52A, V
is rising from 0 to 80% V
, starting T
, see Fig.12a, 12b, 15, 16 for typical repetitive
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
GS
Parameter
=10V. Part not recommended for use
J
= 25°C, L = 0.09mH
Parameter
™
2%.
DSS
.
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
55
‡ This is only applied to TO-220AB pakcage.
ˆ This is applied to D
‰
Š Calculated continuous current based on maximum allowable
R
techniques refer to application note #AN-994.
4 or G-10 Material). For recommended footprint and soldering
0.055
current limitations arising from heating of the device leads may
Typ.
Typ.
2880
1500
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
420
220
330
510
–––
–––
–––
junction temperature. Bond wire current limit is 75A. Note that
occur with some lead mounting arrangements.
6.5
4.5
7.5
7.4
40
12
21
17
26
83
16
is measured at T
Max.
Max.
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
340
8.0
3.0
1.3
11
12
20
60
75
24
11
2
Units
Units
Pak, when mounted on 1" square PCB (FR-
J
V/°C
m
µA
nA
nC
nH
nC
pF
ns
ns
of approximately 90°C.
V
V
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 43A
= 43A
= 25°C, I
= 25°C, I
= 4.3
= 0V, I
= 10V, I
= 5.0V, I
= 4.5V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 16V
= -16V
= 44V
= 5.0V
= 28V
= 5.0V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
D
DS
S
F
D
D
DS
DS
= 250µA
D
D
GS
GS
= 250µA
= 43A, V
= 52A
= 52A, V
= 52A
= 43A
= 30A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
e
Conditions
Conditions
D
e
e
e
= 1mA
GS
DD
J
= 125°C
= 28V
= 0V
f
G
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e
G
D
S
S
D