AH125-89G TriQuint, AH125-89G Datasheet - Page 3
![RF Amplifier 1/2W HI LIN HBT AMP 400-2700MHz](/photos/15/97/159726/sot89_sml.jpg)
AH125-89G
Manufacturer Part Number
AH125-89G
Description
RF Amplifier 1/2W HI LIN HBT AMP 400-2700MHz
Manufacturer
TriQuint
Type
General Purpose Amplifierr
Datasheet
1.AH125-89PCB2140.pdf
(12 pages)
Specifications of AH125-89G
Bandwidth
3600 MHz
Mounting Style
SMD/SMT
Number Of Channels
1
Operating Frequency
3600 MHz
P1db
28 dBm
Noise Figure
4.4 dB @ 2140 MHz
Operating Supply Voltage
5 V
Supply Current
150 mA
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1070578
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AH125-89G
Manufacturer:
TriQuint
Quantity:
5 000
Company:
Part Number:
AH125-89G
Manufacturer:
TRIQUINT
Quantity:
150
Part Number:
AH125-89G
Manufacturer:
WJ
Quantity:
20 000
AH125
½W High Linearity InGaP HBT Amplifier
Frequency
Gain
Input Return Loss
Output Return Loss
EVM
ACLR
Output P1dB
Output IP3
Pout=+18 dBm/tone, 1MHz spacing
Quiescent Current, Icq
Vcc
Note: For improved output return loss, ≥10dB, please contact TriQuint applications support for a reference design employing feedback. Corresponding OIP3
performance will be ~+43dBm.
TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Pout=+18 dBm
Pout=+18 dBm
Typical O-FDMA Performance at 25°C
22
21
20
19
18
17
700
T
LEAD
=+25°C
720
Frequency (MHz)
Gain vs. Frequency
740
+28.9 +29.4 +29.2 dBm
+43.7 +46.2 +45.5 dBm
-52.6
20.4
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW
700
7.5
0.9
12
5
4
3
2
1
0
760
15
20.3
750
150
-56
802.16-2004 O-FDMA, 64QAM-
1/2, 1024-FFT, 20 symbols and 30
subchannels, 5 MHz Carrier BW
6.8
0.7
17
+5
16
780
-54.4
20.1
800
6.3
0.7
25
700 MHz
17
EVM vs. Output Power
700-800 MHz Reference Design
Output Power (dBm)
MHz
800
dBc
mA
dB
dB
dB
18
%
V
750 MHz
-10
-15
-20
-25
-30
-5
19
0
700
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
T
800 MHz
LEAD
20
The primary RF microstrip line is 50
Components shown on the silkscreen but not on the schematic are not used.
0
The edge of C11 is placed at 40 mil from AH125 RFout pin. (1.7
The edge of R3 is placed at 210 mil from the edge of C11. (8.7
The edge of C9 is placed next to the edge of R3.
The edge of R1 is placed at 100 mil from AH125 RFin pin. (4.2
The edge of C10 is placed 250 mil from the edge of R1. (10.4
=+25°C
T
Ω
720
LEAD
jumpers can be replaced with copper trace in target application.
=+25°C
21
Frequency (MHz)
740
Return Loss
22
S11
-40
-45
-50
-55
-60
-65
760
15
S22
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7 dB @ 0.01% Probability
3.84 MHz BW
780
16
700 MHz
ACLR vs. Output Power
Output Power (dBm)
800
17
Ω
Specifications and information are subject to change without notice
.
750 MHz
50
45
40
35
30
10
18
T
LEAD
800 MHz
T
=+25°C
LEAD
12
19
=+25°C
OIP3 vs. Output Power/Tone
700 MHz
Output Power/Tone (dBm)
o
o
14
@ 750 MHz)
20
o
@ 750 MHz)
o
@ 750 MHz)
@ 750 MHz)
750 MHz
16
Page 3 of 12 April 2010
800 MHz
18
20