TCDT1102G Vishay, TCDT1102G Datasheet - Page 2

• Manufacturer Part Number: TCDT1102G
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR 100-200%
• Manufacturer: Vishay

Specifications of TCDT1102G

• Isolation Voltage: 3750 Vrms
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 32 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 32V
• Opto Case Style: DIP
• No. Of Pins: 6
• Input Current Max: 50mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
(1)
(2)
Note
T
Minimum and maximum values are testing requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Document Number: 83535
Rev. 1.6, 16-May-08
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector ermitter cut-off current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to wave profile for soldering conditions for through hole devices.
amb
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
Optocoupler, Phototransistor Output
V
I
V
CE
F
CE
TEST CONDITION
V
= 10 mA, I
= 20 V, I
R
= 5 V, I
I
R
I
= 0, f = 1 MHz
E
F
I
f = 1 MHz
(1)
C
L
= 100 µA
= 50 mA
= 1 mA
= 100 Ω
F
F
2 mm from case, t ≤ 10 s
= 10 mA,
C
= 0, E = 0
t
= 1 mA
p
TEST CONDITION
/T = 0.5, t
t
p
≤ 10 µs
p
≤ 10 ms
SYMBOL
V
V
V
I
CEO
CEsat
V
C
C
CEO
ECO
f
c
F
k
j
MIN.
32
7
TCDT1100/TCDT1100G
SYMBOL
V
V
P
P
T
I
V
T
T
I
P
FSM
V
CEO
ECO
I
CM
amb
I
diss
T
diss
T
ISO
stg
C
sld
F
tot
R
j
j
Vishay Semiconductors
TYP.
1.25
200
110
0.3
50
- 55 to + 100
- 55 to + 125
VALUE
5300
100
125
100
150
125
250
260
32
50
60
5
3
7
MAX.
1.6
0.3
www.vishay.com
UNIT
V
mW
mW
mW
mA
mA
mA
°C
°C
°C
°C
°C
RMS
UNIT
V
A
V
V
kHz
nA
pF
pF
V
V
V
V
777