QED121 Fairchild Semiconductor, QED121 Datasheet

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QED121

Manufacturer Part Number
QED121
Description
Infrared Emitters T13-4 ALGAAS LED
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of QED121

Beam Angle
+/- 18
Maximum Forward Current
100 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.7 V
Wavelength
880 nm
Package / Case
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QED121
Manufacturer:
VARO
Quantity:
1
Part Number:
QED121/122/123
Manufacturer:
FAIRCHILD
Quantity:
10 000
©2001 Fairchild Semiconductor Corporation
QED121, QED122, QED123 Rev. 1.0.1
QED121, QED122, QED123
Plastic Infrared Light Emitting Diode
Features
Package Dimensions
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
Chip material = AlGaAs
Package type: T-1 3/4 (5mm lens diameter)
Matched photosensor: QSD122/QSD123/QSD124
Narrow emission angle, 16°
High output power
Package material and color: clear, peach tinted, plastic
= 880nm
unless otherwise specified.
REFERENCE
SURFACE
PACKAGE DIMENSIONS
0.020 (0.51)
SQ. (2X)
0.800 (20.3)
0.050
(1.25)
MIN
0.195 (4.95)
0.100 (2.54)
0.305 (7.75)
NOM
0.040 (1.02)
0.240 (6.10)
0.215 (5.45)
CATHODE
NOM
Description
The QED121, QED122 and QED123 are 880nm
AlGaAs LEDs encapsulated in a clear peach tinted,
plastic T-1 3/4 package.
Schematic
CATHODE
ANODE
www.fairchildsemi.com
August 2008

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QED121 Summary of contents

Page 1

... Tolerance is ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2001 Fairchild Semiconductor Corporation QED121, QED122, QED123 Rev. 1.0.1 Description The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. 0.305 (7.75) 0.040 (1.02) ...

Page 2

... Radiant Intensity QED122 E I Radiant Intensity QED123 E TC Temperature Coefficient IE t Rise Time r t Fall Time f C Junction Capacitance j ©2001 Fairchild Semiconductor Corporation QED121, QED122, QED123 Rev. 1.0 25°C unless otherwise specified) A Parameter (2)(3)(4) (2)(3) ( 25°C) A Test Conditions Min 20mA 100mA ...

Page 3

... PW Duty Cycle = 4% 4 3.0 2.0 1.0 0.0 10 100 I – FORWARD CURRENT (mA) F ©2001 Fairchild Semiconductor Corporation QED121, QED122, QED123 Rev. 1.0.1 Figure 2. Peak Wavelength vs. Ambient Temperature 910 908 906 904 902 900 898 896 894 900 950 1,000 1,050 0 Figure 4. Normalized Radient Intensity vs. Ambient Temperature 1 ...

Page 4

... Typical Performance Curves Figure 7. Radiation Diagram 90 100 110 120 130 140 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 ©2001 Fairchild Semiconductor Corporation QED121, QED122, QED123 Rev. 1.0.1 (Continued) Figure 8. Coupling Characteristics of QED12X and QSD12X 0.4 10 0.2 0 0.2 0.4 ...

Page 5

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Ful l Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation QED121, QED122, QED123 Rev. 1.0.1 ® PowerTrench ® Programmable Active Droop™ SM ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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