QEB363 Fairchild Semiconductor, QEB363 Datasheet

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QEB363

Manufacturer Part Number
QEB363
Description
Infrared Emitters T-3/4 I/R EMITTER
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of QEB363

Beam Angle
+/- 24
Maximum Forward Current
50 mA
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.6 V
Wavelength
940 nm
Package / Case
T-3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QEB363
Manufacturer:
FSC
Quantity:
1 150
Part Number:
QEB363
Manufacturer:
VISHAY
Quantity:
2 230
Part Number:
QEB363GR
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Company:
Part Number:
QEB363ZR
Quantity:
4 500
©2002 Fairchild Semiconductor Corporation
QEB363 Rev. 1.0.0
QEB363
Subminiature Plastic Infrared Emitting Diode
Features
Package Dimensions
Notes:
1. Dimensions are in inches (mm).
2. Tolerance of ±.010 (.25) on all non nominal dimensions unless otherwise specified.
.118 (3.0)
.102 (2.6)
T-3/4 (2mm) Surface Mount Package
Tape & Reel Option (See Tape & Reel Specifications)
Lead Form Options: Gullwing, Yoke, Z-Bend
Narrow Emission Angle, 24°
Wavelength = 940nm, GaAs
Clear Water Lens
Matched Photosensor: QSB363
High Radiant Intensity
0.024 (0.6)
0.016 (0.4)
0.008 (0.21)
0.004 (0.11)
0.074 (1.9)
0.276 (7.0)
MIN
0.106 (2.7)
0.091 (2.3)
.059 (1.5)
.051 (1.3)
0.019 (0.5)
0.012 (0.3)
0.024 (0.6)
ANODE
0.087 (2.2)
0.071 (1.8)
0.055 (1.4)
Schematic
ANODE
September 2006
www.fairchildsemi.com
tm

Related parts for QEB363

QEB363 Summary of contents

Page 1

... Notes: 1. Dimensions are in inches (mm). 2. Tolerance of ±.010 (.25) on all non nominal dimensions unless otherwise specified. ©2002 Fairchild Semiconductor Corporation QEB363 Rev. 1.0.0 ANODE 0.087 (2.2) 0.071 (1.8) 0.019 (0.5) 0.012 (0.3) .059 (1.5) .051 (1.3) ...

Page 2

... Peak Emission Wavelength P Θ Emission Angle V Forward Voltage F I Reverse Current R I Radiant Intensity e t Rise Time r t Fall Time f ©2002 Fairchild Semiconductor Corporation QEB363 Rev. 1.0 25°C unless otherwise specified) A Parameter (2,3,4) (2,3) ( 25°C) A Test Conditions I = 100mA 100mA 100mA 20ms ...

Page 3

... Fig. 3 Peak Emission Wavelength vs. Ambient Temperature 980 960 940 920 900 - Ambient Temperature T Fig. 5 Relative Radiant Flux vs. Ambient Temperature 0.5 0.2 0.1 - Ambient Temperature T ©2002 Fairchild Semiconductor Corporation QEB363 Rev. 1.0.0 Fig. 2 Relative Radiant Intensity vs 100 (˚ 100 (˚ 100 (˚ Wavelength 100 I ...

Page 4

... Notes: (Applies to all package drawings) 1. Dimensions are in inches (mm). 2. Tolerance of ±.010 (.25) on all non nominal dimensions unless otherwise specified. ©2002 Fairchild Semiconductor Corporation QEB363 Rev. 1.0.0 Yoke Lead Configuration 0.098 (2.5) 0.016 (0.4) ANODE 0.020 (0.5) 0.024 (0.6) ...

Page 5

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete ©2002 Fairchild Semiconductor Corporation QEB363 Rev. 1.0.0 OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...

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