BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 9

• Manufacturer Part Number: BF1205,115
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,115

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Current Rating: 30mA
• Frequency: 800MHz
• Gain: 35dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
Fig.9
(1) V
(2) V
(3) V
V
(mA)
DS
I D
(a) = 5 V; V
12
10
DS
DS
DS
8
6
4
2
0
0
(b) = 5 V.
(b) = 4.5 V.
(b) = 4 V.
Drain current as a function of gate 2 and
drain supply voltage; typical values;
amplifier a.
G1-S
(b) = 0 V; Gate 1 (a) = open; T
2
(4) V
(5) V
DS
DS
(b) = 3.5 V.
(b) = 3 V.
4
V GG = V DS (V)
(1)
j
= 25 C.
(2)
(3)
(4)
(5)
MGX436
6
9
handbook, halfpage
V
f
Fig.10 Unwanted voltage for 1% cross-modulation
(dBμV)
unw
V unw
DS
(a) = V
120
110
100
= 60 MHz; T
90
80
0
as a function of gain reduction; typical values;
amplifier a.
DS
(b) = 5 V; V
amb
= 25 C; see Fig.13.
20
G1-S
(b) = 0 V; f
gain reduction (dB)
w
40
= 50 MHz;
Product specification
BF1205
MGX437
60