BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 9
![MOSFET 2N-CH 10V 30MA SOT363](/photos/16/0/160094/sot363_sml.jpg)
BF1205,115
Manufacturer Part Number
BF1205,115
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,115
Package / Case
6-TSSOP, SC-88, SOT-363
Current Rating
30mA
Frequency
800MHz
Gain
35dB
Transistor Type
N-Channel Dual Gate
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
Fig.9
(1) V
(2) V
(3) V
V
(mA)
DS
I D
(a) = 5 V; V
12
10
DS
DS
DS
8
6
4
2
0
0
(b) = 5 V.
(b) = 4.5 V.
(b) = 4 V.
Drain current as a function of gate 2 and
drain supply voltage; typical values;
amplifier a.
G1-S
(b) = 0 V; Gate 1 (a) = open; T
2
(4) V
(5) V
DS
DS
(b) = 3.5 V.
(b) = 3 V.
4
V GG = V DS (V)
(1)
j
= 25 C.
(2)
(3)
(4)
(5)
MGX436
6
9
handbook, halfpage
V
f
Fig.10 Unwanted voltage for 1% cross-modulation
(dBμV)
unw
V unw
DS
(a) = V
120
110
100
= 60 MHz; T
90
80
0
as a function of gain reduction; typical values;
amplifier a.
DS
(b) = 5 V; V
amb
= 25 C; see Fig.13.
20
G1-S
(b) = 0 V; f
gain reduction (dB)
w
40
= 50 MHz;
Product specification
BF1205
MGX437
60