BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 22
![MOSFET 2N-CH 10V 30MA SOT363](/photos/16/0/160094/sot363_sml.jpg)
BF1205,115
Manufacturer Part Number
BF1205,115
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,115
Package / Case
6-TSSOP, SC-88, SOT-363
Current Rating
30mA
Frequency
800MHz
Gain
35dB
Transistor Type
N-Channel Dual Gate
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
PACKAGE OUTLINE
2003 Sep 30
Plastic surface-mounted package; 6 leads
Dual N-channel dual gate MOS-FET
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
5
2
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
JEITA
scale
22
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
0.1
y
A
c
Product specification
X
v
ISSUE DATE
M
04-11-08
06-03-16
BF1205
A
SOT363