BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 18
![MOSFET 2N-CH 10V 30MA SOT363](/photos/16/0/160094/sot363_sml.jpg)
BF1205,115
Manufacturer Part Number
BF1205,115
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,115
Package / Case
6-TSSOP, SC-88, SOT-363
Current Rating
30mA
Frequency
800MHz
Gain
35dB
Transistor Type
N-Channel Dual Gate
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
2003 Sep 30
handbook, halfpage
reduction
Dual N-channel dual gate MOS-FET
gain
(dB)
Fig.28 Typical gain reduction as a function of AGC
V
R
T
amb
DS
G1
(b) = 5 V; V
(b) = 150 k (connected to V
20
40
60
= 25 C; see Fig.30.
0
0
voltage; amplifier b.
GG
= 5 V; V
1
DS
(a) = V
2
GG
); f = 50 MHz;
G1-S
(a) = 0 V;
3
V AGC (V)
MGX455
4
18
handbook, halfpage
V
R
T
Fig.29 Drain current as a function of gain
(mA)
DS
amb
G1
I D
(b) = 5 V; V
(b) = 150 k (connected to V
16
12
= 25 C; see Fig.30.
8
4
0
0
reduction; typical values; amplifier b.
GG
= 5 V; V
20
DS
(a) = V
GG
); f = 50 MHz;
G1-S
40
(a) = 0 V;
gain reduction (dB)
Product specification
BF1205
MGX456
60