BF1205,135 NXP Semiconductors, BF1205,135 Datasheet - Page 10

• Manufacturer Part Number: BF1205,135
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,135

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Gain: 35dB
• Voltage - Rated: 10V
• Current Rating: 30mA
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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NXP Semiconductors
2003 Sep 30
handbook, halfpage
reduction
Dual N-channel dual gate MOS-FET
gain
(dB)
V
Fig.11 Gain reduction as a function of AGC
DS
(a) = V
20
40
60
0
0
voltage; typical values; amplifier a.
DS
(b) = 5 V; V
1
G1-S
R GEN
50 Ω
(b) = 0 V; f = 50 MHz; see Fig.13.
V i
2
Fig.13 Cross-modulation test set-up for amplifier a.
50 Ω
3
V AGC (V)
50 Ω
MGX438
4.7 nF
4.7 nF
4.7 nF
4
V AGC
V GG
0 V
10 kΩ
g1 (a)
g1 (b)
R G1
150 kΩ
g2
10
BF1205
handbook, halfpage
V
see Fig.13.
Fig.12 Drain current as a function of gain
(mA)
DS
I D
(a) = V
d (a)
s
d (b)
16
12
8
4
0
0
V DS (a)
V DS (b)
reduction; typical values; amplifier a.
5 V
5 V
DS
4.7 nF
4.7 nF
4.7 nF
L1
2.2 μH
L2
2.2 μH
(b) = 5 V; V
MGX440
20
R L
50 Ω
G1-S
(b) = 0 V; f = 50 MHz; T
gain reduction (dB)
40
Product specification
BF1205
MGX439
amb
= 25 C;
60