FDFMJ2P023Z Fairchild Semiconductor, FDFMJ2P023Z Datasheet - Page 5

• Manufacturer Part Number: FDFMJ2P023Z
• Description: MOSFET P-CH DUAL 20V 6-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMJ2P023Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 6.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
FDFM2P023Z Rev.B
Typical Characteristics
Figure 11.
0.001
Figure 9.
10
0.01
10
10
10
10
10
10
10
10
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
Figure 7.
-10
1
-1
-2
-3
-4
-5
-6
-7
-8
-9
0.0
0
0
V
I
D
DS
= -2.9A
T
= 0V
Gate Leakage Current vs Gate to
J
0.2
Schottky Diode Forward Voltage
= 125
-V
1
Gate Charge Characteristics
3
GS ,
V
Source Voltage
F,
o
GATE TO SOURCE VOLTAGE (V)
C
Q
FORWARD VOLTAGE(V)
g
0.4
V
, GATE CHARGE(nC)
DD
T
J
2
6
= -3V
= 150
T
T
J
J
= 25
= 85
0.6
o
C
o
o
T
C
C
J
V
3
9
= 25°C unless otherwise noted
DD
T
0.8
J
= -7V
= 25
V
DD
o
C
12
4
= -5V
1.0
1.2
15
5
5
Figure 12.
0.01
1000
1E-3
1E-4
1E-5
0.1
0.01
100
10
30
0.1
10
1
10
0.1
0.1
1
0
THIS AREA IS
LIMITED BY r
Figure 8.
SINGLE PULSE
T
R
T
Figure 10. Forward Bias Safe
J
A
θ
JA
= MAX RATED
f = 1MHz
V
= 25
GS
= 182
-V
-V
Schottky Diode Reverse Current
o
= 0V
5
C
DS
DS
to Source Voltage
o
C/W
, DRAIN to SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
Operating Area
DS(on)
Capacitance vs Drain
V
R
, REVERSE VOLTAGE (V)
10
1
T
T
J
T
J
= 125
J
= 85
1
= 25
o
o
C
o
15
C
C
20
10
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C
C
C
25
oss
rss
iss
10
100ms
100us
10ms
1ms
1s
10s
DC
30
60
30