GP1S563 Sharp Microelectronics, GP1S563 Datasheet - Page 2

• Manufacturer Part Number: GP1S563
• Description: PHOTOINTERRUPTER SLOT 3.0MM PCB
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S563

• Rohs Status: RoHS non-compliant
• Sensing Distance: 0.118" (3mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 3µs, 4µs
• Mounting Type: Snap-In
• Package / Case: PCB Mount
• Operating Temperature: -25°C ~ 85°C
• Other names: 425-1055-5

Fig.1 Forward Current vs. Ambient
Fig.3 Peak Forward Current vs. Duty Ratio
Transfer
teristics
charac-
Output
Input
Electro-optical Characteristics
10000
Temperature
1000
100
60
50
40
30
20
10
10
0
10
Forward voltage
Peak forward voltage
Reverse current
Collector dark current
Collector current
Response time
Collector-emitter saturation voltage
25
3
Parameter
0
Ambient temperature T
10
2
25
Duty ratio
GP1S563
GP1S566
Rise time
Fall time
50
Pulse width
T
a
10
25 C
a
1
( C)
75
Symbol
V
85
100 s
V
I
CE (sat)
V
CEO
I
I
I
t
t
FM
R
C
C
r
f
F
100
1
V
CE
I
F
V
V
2V,I
CE
CE
40mA, I
Fig.2 Collector Power Dissipation vs.
Fig.4 Forward Current vs. Forward Voltage
I
V
I
Conditions
5V, I
5V, I
C
F
FM
V
CE
R
20mA
mA, R
0.5A
20V
3V
F
F
C
Ambient Temperature
20mA
20mA
100
.5mA
500
200
100
80
75
60
40
20
15
50
20
10
L
0
5
2
1
25
0
100
0.5
0
T
Ambient temperature T
a
50 C
1.0
75 C
Forward voltage V
MIN.
0.5
0.5
25
1.5
0 C
20 C
TYP.
2.0
1.25
25 C
50
3
1
3
4
F
a
(V)
2.5
( C)
MAX.
75 85
100
1.4
5.0
0.4
10
15
15
20
4
3.0
(Ta 25˚C)
100
3.5
Unit
mA
mA
nA
V
V
V
A
s
s