IXFN170N10 IXYS, IXFN170N10 Datasheet
IXFN170N10
Manufacturer Part Number
IXFN170N10
Description
MOSFET N-CH 100V 170A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK170N10.pdf
(4 pages)
Specifications of IXFN170N10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
515nC @ 10V
Input Capacitance (ciss) @ Vds
10300pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.01 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
170 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
170
Rds(on), Max, Tj=25°c, (?)
0.01
Ciss, Typ, (pf)
10300
Qg, Typ, (nc)
515
Trr, Typ, (ns)
-
Trr, Max, (ns)
175
Pd, (w)
595
Rthjc, Max, (ºc/w)
0.21
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN170N10
Manufacturer:
MELEXIS
Quantity:
940
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFET
Single MOSFET Die
Preliminary data
Symbol
V
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
V
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
(T
V
V
I
I
R
D25
D125
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
DSS
GS
GSM
ISOL
DSS
GS(th)
d
DS(on)
J
‚
= 25°C, unless otherwise specified)
„
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
V
V
V
V
V
V
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
S
ISOL
C
C
C
C
C
J
J
C
J
GS
DSS
DS
GS(th)
GS
DS
GS
GS
= 25°C
= 25°C
= 125°C
= 25°C
= 25°C to 150°C
= 25°C to 150°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= 0.8 • V
= 0 V
= ±20V, V
= 10 V, I
= V
£ 1 mA
temperature coefficient
Test Conditions
Test Conditions
DM
temperature coefficient
GS
, di/dt £ 100 A/ms, V
, I
D
D
= 3mA
DSS
D
= 8mA
TM
GS
= 0.5 • I
G
V
= 0V
= 2 W
t = 1 min
t = 1 s
D25
DD
£ V
DSS
T
T
J
J
= 25°C
= 125°C
Min.
100
170N10
0.9/6
IXFK
N/A
N/A
N/A
100
100
±20
±30
680
170
560
170ƒ
2
60
10
76
Maximum Ratings
IXFN170N10
IXFK170N10
5
300
-55 ... +150°C
-55 ... +150°C
Characteristic Values
-0.183
0.077
Typ.
150
2500
3000
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
N/A
170N10
±200
30
Max.
IXFN
400
10
100
100
±20
±30
170
680
170
NA
4
2
60
5
600 W
V/ns
%/K
%/K
mW
mA
mJ
V~
V~
°C
°C
nA
mA
V
V
V
V
A
A
A
V
V
g
100V 170A
100V 170A
V
DSS
TO-264 AA (IXFK)
Features
·
·
·
·
·
·
·
·
Applications
·
·
·
·
·
·
·
Advantages
·
·
·
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
International standard packages
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
E153432
DS (on)
I
D25
G
HDMOS
D
S
R
10mW
10mW
DS(on)
G
D = Drain
TAB = Drain
TM
process
S
97505D (7/00)
D
200ns
200ns
D (TAB)
t
1 - 4
rr
S
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IXFN170N10 Summary of contents
Page 1
... 0.5 • I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFN170N10 IXFK170N10 Maximum Ratings IXFK IXFN 170N10 170N10 100 100 ±20 ±30 170ƒ ...
Page 2
... Characteristic Values Min. Typ. Max. 170 680 1.5 175 = 100 V 1.1 R 12.6 JM. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFK170N10 IXFN170N10 TO-264 AA Outline Dim. Millimeter Min. Max 4.82 5.13 A1 2.54 2.89 ...
Page 3
... I D25 D Figure 4. R 2.2 2.0 1.8 1 1.4 1.2 1.0 200 250 300 100 100 125 150 IXFK170N10 IXFN170N10 Figure 2. Output Characteristics at 125 V =10V GS T =125 Volts DS normalized to 0.5 I DS(on) V =10V GS I =170A D I =85A 100 125 ...
Page 4
... IXYS All rights reserved 18000 15000 12000 9000 6000 3000 400 500 600 170 1.2 1.4 1 Pulse Width - Seconds IXFK170N10 IXFN170N10 Figure 8. Capacitance Curves f = 1MHz Ciss Coss Crss Volts DS Figure10. Forward Bias Safe Operating Area Volts 100 ...