APTM10SKM02G Microsemi Power Products Group, APTM10SKM02G Datasheet - Page 5

• Manufacturer Part Number: APTM10SKM02G
• Description: MOSFET N-CH 100V 495A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM10SKM02G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 495A
• Vgs(th) (max) @ Id: 4V @ 10mA
• Gate Charge (qg) @ Vgs: 1360nC @ 10V
• Input Capacitance (ciss) @ Vds: 40000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
Threshold Voltage vs Temperature
-50 -25
0
Breakdown Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
T
10
C
, Case Temperature (°C)
0
0
25 50 75 100 125 150
25 50 75 100 125 150
20
30
40
Coss
Ciss
Crss
50
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10000
1000
100
16
14
12
10
10
Gate Charge vs Gate to Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
1
0
APTM10SKM02G
-50 -25
1
Single pulse
T
T
limited by
R
I
T
D
DSon
J
C
J
=400A
V
I
V
=150°C
=25°C
D
Maximum Safe Operating Area
=25°C
ON resistance vs Temperature
GS
= 200A
T
DS
400
J
=10V
, Junction Temperature (°C)
, Drain to Source Voltage (V)
0
Gate Charge (nC)
800
25
V
DS
=50V
10
50
1200
V
75 100 125 150
DS
=20V
1600
V
DS
10ms
=80V
1ms
100µs
2000
100
5 - 6