APTM10SKM02G Microsemi Power Products Group, APTM10SKM02G Datasheet - Page 3

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APTM10SKM02G

Manufacturer Part Number
APTM10SKM02G
Description
MOSFET N-CH 100V 495A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10SKM02G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 200A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
495A
Vgs(th) (max) @ Id
4V @ 10mA
Gate Charge (qg) @ Vgs
1360nC @ 10V
Input Capacitance (ciss) @ Vds
40000pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal and package characteristics
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
Symbol Characteristic
SP6 Package outline
Torque
V
R
T
T
Wt
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
To heatsink
For terminals
Transistor
Diode
APTM10SKM02G
M6
M5
2500
Min
-40
-40
-40
3
2
Typ
Max
0.14
150
125
100
280
0.1
3.5
5
°C/W
Unit
N.m
°C
V
g
3 - 6

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