APT10026JLL Microsemi Power Products Group, APT10026JLL Datasheet - Page 2

• Manufacturer Part Number: APT10026JLL
• Description: MOSFET N-CH 1000V 30A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT10026JLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 267nC @ 10V
• Input Capacitance (ciss) @ Vds: 7114pF @ 25V
• Power - Max: 595W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
THERMAL CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
R
R
C
t
C
dv
C
V
Q
Q
E
E
Q
d(on)
d(off)
E
E
I
Q
t
SM
I
oss
t
t
SD
iss
rss
S
on
off
on
off
rr
/
gs
gd
r
f
JC
JA
g
rr
dt
0.25
0.20
0.15
0.10
0.05
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Peak Diode Recovery
Characteristic
Junction to Case
Junction to Ambient
10
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.05
0.9
0.7
0.5
0.3
0.1
10
-4
3
dv
2
1
/
dt
(V
S
(Body Diode)
6
6
5
= -
GS
S
= -
38A
= 0V, I
10
RECTANGULAR PULSE DURATION (SECONDS)
38A
-3
, dl
, dl
S
S
/dt = 100A/µs)
= -
S
/dt = 100A/µs)
SINGLE PULSE
38A
)
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
10
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
-2
DD
Test Conditions
DD
dv
device itself.
I
I
D
D
I
I
D
D
/
= 667V, V
= 667V, V
= 38A, R
= 38A, R
dt
V
V
= 38A @ 25°C
= 38A @ 25°C
V
V
V
R
V
f = 1 MHz
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
G
GS
= 0.6
= 500V
= 500V
= 15V
= 25V
= 10V
= 0V
j
G
G
= +25°C, L = 7.11mH, R
GS
GS
= 3
= 3
= 15V
I
= 15V
S
10
-1
-
I
D
30A
di
/
Note:
dt
MIN
MIN
Peak T J = P DM x Z JC + T C
MIN
Duty Factor D =
700A/µs
1.0
G
t 1
= 25 , Peak I
7114
1268
1196
2014
1182
31.9
TYP
TYP
224
267
173
713
971
TYP
t 2
34
17
39
8
9
V
R
t 1
/ t
2
1000V
MAX
MAX
MAX
0.21
L
120
APT10026JLL
1.3
40
30
10
10
= 30A
T
J
Amps
150
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
µ
ns
J
°
C