IXFN56N90P IXYS, IXFN56N90P Datasheet - Page 2

• Manufacturer Part Number: IXFN56N90P
• Description: MOSFET N-CH SOT-227B
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFN56N90P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 135 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 6.5V @ 3mA
• Gate Charge (qg) @ Vgs: 375nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 135 mOhms
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 900 V
• Continuous Drain Current: 56 A
• Power Dissipation: 1000 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 375 nC
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 900
• Id(cont), Tc=25°c, (a): 56
• Rds(on), Max, Tj=25°c, (?): 0.145
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 375
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1000
• Rthjc, Max, (ºc/w): 0.125
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
Gi
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1.
I
V
Test Conditions
Resistive Switching Times
V
R
F
Test Conditions
V
Gate Input Resistance
V
V
V
Repetitive, Pulse Width Limited by T
I
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
F
R
= 0.5 • I
GS
DS
GS
G
GS
GS
= I
= 100V, V
= 10V, V
= 1Ω (External)
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
D25
= 0V, Note 1
, -di/dt = 100A/μs
GS
D
DS
DS
DS
= 0.5 • I
= 0V
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
27
Characteristic Values
Min.
Characteristic Values
Min.
1385
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
0.85
0.05
106
375
145
1.8
44
15
23
38
80
74
80
93
Typ.
0.125 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
224
300 ns
1.5
56
Max.
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B (IXFN) Outline
6,727,585
6,771,478 B2 7,071,537
(M4 screws (4x) supplied)
IXFN56N90P
7,005,734 B2
7,063,975 B2
7,157,338B2