MUBW25-12A7 IXYS, MUBW25-12A7 Datasheet
MUBW25-12A7
Specifications of MUBW25-12A7
Available stocks
Related parts for MUBW25-12A7
MUBW25-12A7 Summary of contents
Page 1
... C Symbol Conditions 25° 125° 25° RRM T = 125° 100 di/dt = -15 A/µ (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved (CBI2 NTC 9 Three Phase Inverter V = 1200 V CES C25 ...
Page 2
... J/K; R th1 max 0.809 J/K; R th2 3.1 V Free Wheeling Diode (typ 0.043 J/K; R th1 C = 0.54 J/K; R th2 A ns 2.1 K/W © 2004 IXYS All rights reserved = 125° Ω 125° Ω 125° Ω 125° 131 m Ω 125° Ω ...
Page 3
... 125° 25° RRM T = 125° /dt = -400 A/µ 600 thJC © 2004 IXYS All rights reserved Maximum Ratings 1200 ± 20 ± 125° ≤ CEK CES = 82 Ω 125° 105 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2.9 ...
Page 4
... Dimensions 0.0394" Characteristic Values min. typ. max. 4.75 5.0 5.25 kΩ 3375 K Maximum Ratings °C -40...+125 °C 150 °C -40...+125 2500 V~ 2.7 - 3.3 Nm Characteristic Values min. typ. max. 5 mΩ 0.02 K/W 180 g MUBW 25-12 A7 © 2004 IXYS All rights reserved ...
Page 5
... Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180° 1.6 K/W 1.2 Z thJC 0.8 0.4 0.0 0.001 0.01 Fig. 6 Transient thermal impedance junction to case © 2004 IXYS All rights reserved 100 50Hz, 80% V RRM 45° FSM 150° ...
Page 6
... V F Fig. 10 Typ. forward characteristics of free wheeling diode 200 400 600 800 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode © 2004 IXYS All rights reserved 11V 9V = 125° 25° 200 160 120 80 = 125°C = 600V 40 = 15A MUBW2512A7 0 1000 A/µs ...
Page 7
... Fig.16 Typ. turn off energy and switching times versus gate resistor 10 1 0.1 single pulse 0.00001 0.0001 0.001 0.01 0.1 t Fig. 18 Typ. transient thermal impedance 600 ns t d(off) t 400 200 800 t d(off) ns 600 t E off 400 = 600V = ±15V = 25 200 = 125° Ω 80 100 diode IGBT MUBW2512A7 ...
Page 8
... Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC Ω 100 100 T Fig. 24 Typ. thermistorresistance versus temperature © 2004 IXYS All rights reserved T = 25° 600 d(off) 400 200 Ω 120 140 R G MUBW2512A7 125 150 °C ...