MW7IC008NT1 Freescale Semiconductor, MW7IC008NT1 Datasheet - Page 3

• Manufacturer Part Number: MW7IC008NT1
• Description: IC PWR AMP RF 900MHZ 8W 24-QFN
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC008NT1

• Current - Supply: 75mA
• Frequency: 100MHz ~ 1GHz
• Gain: 23.5dB
• P1db: 11W
• Package / Case: 24-QFN
• Rf Type: General Purpose
• Test Frequency: 100MHz
• Voltage - Supply: 32V
• Manufacturer's Type: Power Amplifier
• Number Of Channels: 1
• Frequency (max): 1GHz
• Operating Supply Voltage (min): 24V
• Operating Supply Voltage (typ): 28V
• Operating Supply Voltage (max): 32V
• Package Type: PQFN EP
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Stage 1 — Off Characteristics
Stage 1 — On Characteristics
Stage 2 — Off Characteristics
Stage 2 — On Characteristics
Functional Tests
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Power Added Efficiency
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
DS
DS
GS
DS
DD
GS
= 65 Vdc, V
= 28 Vdc, V
= 1.5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 65 Vdc, V
= 28 Vdc, V
= 1.5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
(1)
D
D
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
GS
GS
DS
DS
= 5.3 μAdc)
= 25 mAdc, Measured in Functional Test)
= 23 μAdc)
= 75 mAdc, Measured in Functional Test)
= 3.6 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Characteristic
900 MHz @ 6.5 W CW
100 MHz @ 11 W CW
400 MHz @ 9 W CW
Frequency
(T
A
= 25°C unless otherwise noted)
DD
= 28 Vdc, I
Symbol
V
V
V
V
V
DQ1
DD
I
I
I
I
I
I
DS(on)
PAE
GS(th)
GS(Q)
GS(th)
GS(Q)
G
GSS
GSS
IRL
DSS
DSS
DSS
DSS
ps
= 28 Vdc, I
= 25 mA, I
21.5
Min
DQ1
1.3
1.3
0.1
DQ2
30
—
—
—
—
—
—
—
2
2
= 25 mA, I
= 75 mA, P
(dB)
23.5
22.5
23.5
G
ps
23.5
Typ
--15
2.8
2.7
0.3
34
—
—
—
—
—
—
2
2
DQ2
out
= 75 mA
= 6.5 W CW, f = 900 MHz
PAE
(%)
55
41
34
Max
31.5
--11
2.8
3.5
2.8
3.5
10
10
10
10
—
1
1
1
MW7IC008NT1
(continued)
(dB)
IRL
--20
--17
--15
μAdc
μAdc
μAdc
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
dB
dB
%
3