MSA-1120 Avago Technologies US Inc., MSA-1120 Datasheet - Page 2

• Manufacturer Part Number: MSA-1120
• Description: AMP MMIC SI BIPOLAR 200-MIL BeO
• Manufacturer: Avago Technologies US Inc.
• Series: -r
• Type: General Purposer

Specifications of MSA-1120

• Gain: 11.5dB ~ 13.5dB
• Rf Type: ISM
• Current - Supply: 40mA ~ 75mA
• Frequency: 50MHz ~ 1.6GHz
• Noise Figure: 3.5dB ~ 4.5dB
• P1db: 16dBm ~ 17.5dBm
• Package / Case: 4-SMD (100 mil)
• Test Frequency: 500MHz
• Voltage - Supply: 4.5V ~ 6.5V
• Frequency Range: 50MHz To 1.6GHz
• Noise Figure Typ: 3.5dB
• Power Dissipation Pd: 650mW
• Supply Current: 75mA
• Supply Voltage Range: 4.5V To 6.5V
• Number Of Channels: 1
• Frequency (max): 25GHz
• Output Power: 17.5@500MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 4.5V
• Single Supply Voltage (typ): 5.5V
• Single Supply Voltage (max): 6.5V
• Package Type: BeO
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 4
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Specifications
MSA-1120 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 16.7 mW/°C for T
4. The small spot size of this technique results in a higher, though more accurate determination
Notes:
1. The recommended operating current range for this device is 40 to 75 mA.
2. Referenced from 50 MHz gain (GP).

Parameter
Device Current
Power Dissipation
RF Input Power
Junction Temperature
Storage Temperature
Symbol
VSWR
G
∆G
f
NF
P
IP
t
V
dV/dT
3 dB
D
1 dB
d
P
3
of θ
Typical performance as a function of current is on the following page.
CASE
P
jc
than do alternate methods.
= 25°C.
[,3]
Parameters and Test Conditions: I
Power Gain (|S
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50 Ω Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
[1]
C
> 161°C.
, T
1
A
[]
|
= 25°C

)
d
= 60 mA, Z
Absolute Maximum
–65 to 00°C
+13 dBm
650 mW
100 mA
f = 0.1 GHz
f = 0.1 to 1.0 GHz
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
O
00°C
= 50 Ω
[1]
Thermal Resistance
θ
jc
= 60°C/W
Units
mV/°C
dBm
dBm
psec
GHz
dB
dB
dB
V
Min.
11.5
16.0
[2,4]
4.5
:
Typ.
±0.7
1.7:1
1.9:1
–8.0
1.5
17.5
30.0
00
1.6
3.5
5.5
Max.
±1.0
13.5
4.5
6.5