SGA-4263Z Sirenza Microdevices Inc, SGA-4263Z Datasheet - Page 2

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SGA-4263Z

Manufacturer Part Number
SGA-4263Z
Description
IC AMP HBT SIGE 3500MHZ SOT-363
Manufacturer
Sirenza Microdevices Inc
Datasheet

Specifications of SGA-4263Z

Current - Supply
41mA ~ 49mA
Frequency
0Hz ~ 3.5GHz
Gain
12.7dB
Noise Figure
3.7dB
P1db
12.5dBm
Package / Case
SC-70-6, SC-88, SOT-363
Rf Type
Cellular, GSM, PCS, UMTS
Test Frequency
1.95GHz
Voltage - Supply
2.9V ~ 3.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
599-1030-2

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SGA-4263(Z)
Typical Performance with 2.45GHz Application Circuit
2 of 8
Absolute Maximum Ratings
Max Device Current (I
Max Device Voltage (V
Max RF Input Power
Max Junction Temp (T
Operating Temp Range (T
Max Storage Temp
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Test Conditions: V
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
<(T
J
Parameter
-T
Output Power at 1dB Compression
Output Third Order Intercept Point
L
)/R
S
TH
=8V, I
Output Return Loss
, j-l
Small Signal Gain
Input Return Loss
D
J
Reverse Isolation
D
)
)
Parameter
)
Noise Figure
D
L
)
=45mA Typ., OIP
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3
Tone Spacing=1MHz, P
-40 to +85
Rating
+150
+150
+18
90
5
Unit
dBm
dBm
dB
dB
dB
dB
dB
OUT
per tone=-10dBm, R
Unit
dBm
mA
°C
°C
°C
V
MHz
100
14.1
23.4
27.5
17.7
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
MHz
500
13.9
29.5
14.1
31.8
22.0
18.3
3.6
BIAS
=100, T
Caution! ESD sensitive device.
MHz
850
14.0
29.3
14.2
29.4
21.7
18.5
3.4
L
=25°C, Z
1950
MHz
S
12.7
25.7
12.5
13.8
19.0
31.3
3.7
=Z
L
=50
2400
MHz
12.4
23.6
11.3
12.2
19.0
33.1
4.3
DS091118
3500
MHz
18.3
18.2
11.3
11.7

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