SI8445DB-T2-E1 Vishay, SI8445DB-T2-E1 Datasheet

MOSFET P-CH D-S 20V MICROFOOT

SI8445DB-T2-E1

Manufacturer Part Number
SI8445DB-T2-E1
Description
MOSFET P-CH D-S 20V MICROFOOT
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI8445DB-T2-E1

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
84 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9.8A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 5V
Input Capacitance (ciss) @ Vds
700pF @ 10V
Power - Max
11.4W
Mounting Type
Surface Mount
Package / Case
4-MICRO FOOT®CSP
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Source
Resistance Drain-source Rds (on)
0.084 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6.5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 5 V
Continuous Drain Current
3.9 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-9.8A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
84mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-350mV
Power Dissipation Pd
1.8W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI8445DB-T2-E1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8445DB-T2-E1
Manufacturer:
Vishay/Siliconix
Quantity:
56 590
Part Number:
SI8445DB-T2-E1
Manufacturer:
LT
Quantity:
631
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
Document Number: 69984
S-82768-Rev. C, 17-Nov-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditions
V
DS
- 20
(V)
Device Marking: 8445
Ordering Information: Si8445DB-T2-E1 (Lead (Pb)-free)
Bump Side View
S
S
2
3
C
= 25 °C.
0.084 at V
0.100 at V
0.120 at V
0.155 at V
0.495 at V
G
D
R
1
4
DS(on)
MICRO FOOT
xxx = Date/Lot Traceability Code
GS
GS
GS
GS
GS
c
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
= - 1.2 V
J
= 150 °C)
Backside View
P-Channel 20-V (D-S) MOSFET
I
D
- 9.8
- 9.0
- 5.0
- 2.0
- 0.5
(A)
e
A
= 25 °C, unless otherwise noted
Q
IR/Convection
9.5 nC
g
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• Ultra Small 1.2 mm Length x 1 mm Width
• Ultra Thin 0.59 mm Height
• Portable Devices
Symbol
T
J
- Battery Management
- Low Threshold Load Switch
- Battery Protection
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
stg
®
Power MOSFET
G
P-Channel MOSFET
- 55 to 150
- 3.9
- 3.1
- 1.5
1.8
1.1
Limit
- 9.8
- 7.9
- 9.5
11.4
- 20
- 10
260
± 5
7.3
a, b
a, b
a, b
a, b
a, b
S
D
Vishay Siliconix
Si8445DB
www.vishay.com
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI8445DB-T2-E1 Summary of contents

Page 1

... Backside View Device Marking: 8445 xxx = Date/Lot Traceability Code Ordering Information: Si8445DB-T2-E1 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si8445DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 100 °C/W. c. Case is defined as top surface of the package. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage ...

Page 3

... Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69984 S-82768-Rev. C, 17-Nov-08 Symbol Test Conditions ° dI/dt = 100 A/µ ° Si8445DB Vishay Siliconix Min. Typ. Max. Unit - 9 0 www.vishay.com 3 ...

Page 4

... Si8445DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 1 0. 0.15 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com 1 1.5 2.0 2 ...

Page 5

... D 75 100 125 150 100 Limited DS(on 0.1 BVDSS °C A Limited Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si8445DB Vishay Siliconix 0. 0.20 0.15 T 0.10 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 1 ...

Page 6

... Si8445DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse 0.1 0.0001 Document Number: 69984 S-82768-Rev. C, 17-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0.001 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si8445DB Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA (t) 3 ...

Page 8

... Si8445DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP ( 0.5 mm PITCH Ø 0.24 to 0.26 Note 4 Solder Mask ~ Ø 0. Recommended Land 8445 XXX Mark on Backside of die Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter ∅ 0.30 to 0.32 mm. ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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