SI4447DY-T1-GE3 Vishay, SI4447DY-T1-GE3 Datasheet - Page 5
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SI4447DY-T1-GE3
Manufacturer Part Number
SI4447DY-T1-GE3
Description
MOSFET P-CH D-S 40V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4447DY-T1-E3.pdf
(6 pages)
Specifications of SI4447DY-T1-GE3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
72 mOhm @ 4.5A, 15V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
805pF @ 20V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
-3.3A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2.2V
Power Dissipation Pd
1.1W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4447DY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4447DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
0.01
0.1
www.vishay.com/ppg?73662.
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si4447DY
www.vishay.com
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