SI4447DY-T1-GE3 Vishay, SI4447DY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4447DY-T1-GE3
• Description: MOSFET P-CH D-S 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4447DY-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 4.5A, 15V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 805pF @ 20V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.3A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2.2V
• Power Dissipation Pd: 1.1W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4447DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
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Vishay Siliconix
Si4447DY
www.vishay.com
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