SI4447DY-T1-GE3 Vishay, SI4447DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4447DY-T1-GE3
• Description: MOSFET P-CH D-S 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4447DY-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 4.5A, 15V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 805pF @ 20V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.3A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2.2V
• Power Dissipation Pd: 1.1W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4447DY-T1-GE3TR

Si4447DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
I
D
-3
50
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
100
0.1
10
100
1
0.1
10
Limited by R
* V
-2
Limited
125
GS
I
D(on)
Single Pulse
T
A
> minimum V
= 25 °C
V
150
DS
DS(on)
Square Wave Pulse Duration (s)
Safe Operating Area
- Drain-to-Source Voltage (V)
1
10
*
BV
GS
-1
DSS
at which R
Limited
DS(on)
10
50
40
30
20
10
0
0.001
I
DM
1
is specified
Limited
Single Pulse Power, Junction-to-Ambient
0.01
1 ms
10 ms
100 ms
1 s
10 s
DC
100
0.1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
Time (s)
- T
S09-0322-Rev. B, 02-Mar-09
t
A
1
1
Document Number: 73662
= P
t
2
DM
Z
10
thJA
100
thJA
t
t
1
2
(t)
= 65 °C/W
100
6
0
6
0
0
0