SI4447DY-T1-GE3 Vishay, SI4447DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4447DY-T1-GE3
• Description: MOSFET P-CH D-S 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4447DY-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 4.5A, 15V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 805pF @ 20V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.3A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2.2V
• Power Dissipation Pd: 1.1W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4447DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
0.10
0.08
0.06
0.04
0.02
0.00
20
10
6
5
4
3
2
1
0
1
0.0
0
0
I
D
Source-Drain Diode Forward Voltage
V
0.2
= 4.5 A
GS
On-Resistance vs. Drain Current
2
4
V
= 4.5 V
SD
V
Q
0.4
DS
g
- Source-to-Drain Voltage (V)
T
- Total Gate Charge (nC)
I
D
= 10 V
4
J
- Drain Current (A)
= 150 °C
Gate Charge
8
0.6
6
V
GS
0.8
12
V
= 10 V
DS
8
= 20 V
1.0
T
J
= 25 °C
16
10
1.2
1.4
20
12
1240
1116
0.30
0.25
0.20
0.15
0.10
0.05
0.00
992
868
744
620
496
372
248
124
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
C
D
- 25
GS
rss
5
= 4.5 A
= 10 V
2
V
V
T
GS
10
DS
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
15
25
Capacitance
4
C
20
50
oss
Vishay Siliconix
C
iss
T
T
A
A
= 25 °C
= 125 °C
6
25
75
Si4447DY
www.vishay.com
100
I
30
D
= 4.5 A
8
125
35
150
10
40
3