NDF10N62ZG ON Semiconductor, NDF10N62ZG Datasheet - Page 6

• Manufacturer Part Number: NDF10N62ZG
• Description: MOSFET N-CH 620V .75OHM TO220FP
• Manufacturer: ON Semiconductor

Specifications of NDF10N62ZG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1425pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Forward Transconductance Gfs (max / Min): 7.9 S
• Drain-source Breakdown Voltage: 620 V
• Continuous Drain Current: 5.7 A, 10 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 47 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDF10N62ZG; NDF10N62ZGOS

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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F
Q
1 2 3
H
4
B
N
1 2 3
−B−
D
D
0.25 (0.010)
A
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3 PL
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−Y−
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N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
USA/Canada
Phone: [phone]
Phone: 81−3−5773−3850
B
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http://onsemi.com
CASE 221D−03
CASE 221A−09
U
R
J
Y
S
TO−220AB
TO−220FP
ISSUE AE
ISSUE K
C
C
−T−
6
J
−T−
S
R
SEATING
PLANE
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
Y14.5M, 1982.
STANDARD 221D-03.
STYLE 1:
DIM
A
B
C
D
G
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PIN 1. GATE
NOTES:
2. DRAIN
3. SOURCE
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
0.617
0.392
0.177
0.024
0.116
0.118
0.018
0.503
0.048
0.122
0.099
0.092
0.239
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
MIN
0.100 BSC
0.200 BSC
STYLE 5:
INCHES
Y14.5M, 1982.
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
K
L
N
Q
R
S
T
U
V
Z
J
PIN 1. GATE
0.635
0.419
0.193
0.039
0.129
0.135
0.025
0.541
0.058
0.138
0.271
0.117
0.113
MAX
2. DRAIN
3. SOURCE
4. DRAIN
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
MIN
---
INCHES
15.67
12.78
MILLIMETERS
MIN
9.96
4.50
0.60
2.95
3.00
0.45
1.23
3.10
2.51
2.34
6.06
2.54 BSC
5.08 BSC
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.055
0.255
0.050
0.080
0.110
MAX
---
MAX
16.12
10.63
13.73
4.90
1.00
3.28
3.43
0.63
1.47
3.50
2.96
2.87
6.88
14.48
12.70
MILLIMETERS
NDF10N62Z/D
MIN
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
15.75
10.28
14.27
MAX
4.82
0.88
4.09
2.66
3.93
0.64
1.52
5.33
3.04
2.79
1.39
6.47
1.27
2.04
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