NDF10N62ZG ON Semiconductor, NDF10N62ZG Datasheet - Page 4
![MOSFET N-CH 620V .75OHM TO220FP](/photos/37/63/376316/to220fp_sml.jpg)
NDF10N62ZG
Manufacturer Part Number
NDF10N62ZG
Description
MOSFET N-CH 620V .75OHM TO220FP
Manufacturer
ON Semiconductor
Datasheet
1.NDF10N62ZG.pdf
(6 pages)
Specifications of NDF10N62ZG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
1425pF @ 25V
Power - Max
36W
Mounting Type
Through Hole
Package / Case
TO-220FP
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.65 Ohms
Forward Transconductance Gfs (max / Min)
7.9 S
Drain-source Breakdown Voltage
620 V
Continuous Drain Current
5.7 A, 10 A
Power Dissipation
36 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
47 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDF10N62ZG
NDF10N62ZGOS
NDF10N62ZGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDF10N62ZG
Manufacturer:
ON
Quantity:
700
Company:
Part Number:
NDF10N62ZG
Manufacturer:
INFINEON
Quantity:
2 000
20
15
10
0.01
5
0
100
0.1
10
10
0
8
6
4
2
0
1
0
0.4
Q
V
gs
Figure 7. Drain−to−Source Leakage Current
5
GS
Drain−to−Source Voltage vs. Total Charge
V
T
J
GS
= 0 V
100
= 25°C
V
10
Figure 11. Diode Source Current vs.
V
0.5
SD
DS
= 0 V
V
Figure 9. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q
15
g
, TOTAL GATE CHARGE (nC)
200
0.6
20
Forward Voltage
Q
vs. Voltage
gd
T
J
QT
T
300
25
= 150°C
J
= 100°C
0.7
30
400
35
0.8
V
I
T
D
TYPICAL CHARACTERISTICS
J
DS
= 10 A
40
500
= 25°C
= 310 V
0.9
V
45
GS
http://onsemi.com
600
50
1.0
400
300
200
100
0
4
1000
3500
3000
2500
2000
1500
1000
100
0.01
500
100
0.1
10
10
1
0
1
1
0
1
Figure 10. Resistive Switching Time Variation
V
I
V
R
Thermal Limit
Package Limit
D
Figure 12. Maximum Rated Forward Biased
V
Single Pulse
T
DD
GS
DS(on)
= 10 A
C
GS
C
Mounted on 2″ sq. FR4
board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one
die operating
25
= 310 V
= 10 V
= 25°C
Safe Operating Area for NDF10N62Z
rss
V
= 10 V
V
C
C
DS
DS
Figure 8. Capacitance Variation
Limit
oss
iss
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
50
R
G
, GATE RESISTANCE (W)
vs. Gate Resistance
10
75
100
10
1 ms
125
100 ms
100
150
V
T
GS
J
= 25°C
10 ms
= 0 V
10 ms
175
dc
t
t
t
t
d(off)
r
d(on)
f
1000
200
100