SI4904DY-T1-GE3 Vishay, SI4904DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4904DY-T1-GE3
• Description: MOSFET N-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4904DY-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 2390pF @ 20V
• Power - Max: 3.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4904DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
0.020
0.018
0.016
0.014
0.012
0.010
10
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
8
6
4
2
0
0.0
0
0
I
D
= 5 A
V
GS
0.6
12
4
V
= 4.5 V
V
DS
DS
Output Characteristics
Q
g
= 20 V
– Drain-to-Source Voltage (V)
V
I
D
– Total Gate Charge (nC)
DS
V
GS
Gate Charge
– Drain Current (A)
= 10 V
1.2
24
8
= 10 V
V
DS
= 30 V
1.8
12
36
V
GS
= 10 thru 3 V
2 V
2.4
16
48
3.0
20
60
3500
2800
2100
1400
700
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.8
1.5
1.2
0.9
0.6
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
I
- 25
D
= 5 A
0.6
V
V
8
DS
GS
Transfer Characteristics
T
0
J
T
– Junction Temperature (°C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
C
= 125 °C
oss
Capacitance
25
25 °C
1.2
16
Vishay Siliconix
C
50
iss
1.8
24
75
Si4904DY
www.vishay.com
- 55 °C
V
100
GS
V
GS
2.4
32
= 10 V
= 4.5 V
125
150
3.0
40
3