NUP8010MNT1G ON Semiconductor, NUP8010MNT1G Datasheet - Page 3

• Manufacturer Part Number: NUP8010MNT1G
• Description: IC TVS ARRAY LO CAP DFN8
• Manufacturer: ON Semiconductor

Specifications of NUP8010MNT1G

• Voltage - Reverse Standoff (typ): 3V
• Voltage - Breakdown: 5.3V
• Power (watts): 20W
• Polarization: 8 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-TFDFN Exposed Pad
• Applications: General Purpose
• Number Of Circuits: 8
• Voltage - Working: 3V
• Voltage - Clamping: 13V
• Technology: Diode Array
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
10
1
0
1
-60
Figure 3. Reverse Leakage versus Temperature
-40
-20
Figure 1. Pulse Width
TYPICAL PERFORMANCE CURVES
T, TEMPERATURE (°C)
10
0
t, TIME (ms)
0.001
20
0.01
0.1
1
0.6
40
100
60
0.8
Figure 5. Forward Voltage
V
80
http://onsemi.com
F
, FORWARD VOLTAGE (V)
NUP8010MN
1.0
1000
100
3
1.2
(T
100
100
110
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
A
0
0
= 25°C unless otherwise specified)
0
0
t
1.4
r
t
P
Figure 4. 8 × 20 ms Pulse Waveform
25
T
Figure 2. Power Derating Curve
A
T
= 25°C
1.6
A
20
PEAK VALUE I
, AMBIENT TEMPERATURE (°C)
50
HALF VALUE I
1.8
t, TIME (ms)
PULSE WIDTH (t
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
40
75
RSM
@ 8 ms
RSM
100
/2 @ 20 ms
P
) IS DEFINED
60
125
150
80