NUP8010MNT1G ON Semiconductor, NUP8010MNT1G Datasheet - Page 2

• Manufacturer Part Number: NUP8010MNT1G
• Description: IC TVS ARRAY LO CAP DFN8
• Manufacturer: ON Semiconductor

Specifications of NUP8010MNT1G

• Voltage - Reverse Standoff (typ): 3V
• Voltage - Breakdown: 5.3V
• Power (watts): 20W
• Polarization: 8 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-TFDFN Exposed Pad
• Applications: General Purpose
• Number Of Circuits: 8
• Voltage - Working: 3V
• Voltage - Clamping: 13V
• Technology: Diode Array
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current per Figure 4.
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ESD Discharge IEC61000-4-2
Peak Power Dissipation (8 x 20 mS @ T
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
Maximum Reverse Working Voltage
Breakdown Voltage
Leakage Current
Clamping Voltage
Capacitance
Capacitance
Parameter
Parameter
A
(T
= 25°C)
Symbol
J
V
= 25°C unless otherwise noted)
V
RWM
C
C
V
I
BR
R
c
d
d
http://onsemi.com
NUP8010MN
f = 1 MHz, V
f = 1 MHz, V
Test Conditions
V
I
RWM
I
R
PP
= 1.0 mA
Contact Discharge
2
= 1.6 A
= 3.3 V
R
Air Discharge
R
= 3.0 V
= 0 V
Min
5.3
Symbol
(Note 1)
T
V
T
P
STG
T
OP
PP
pk
L
0.01
Typ
5.6
7.0
13
-55 to 150
-40 to 85
Value
260
8.0
15
20
Max
11.5
3.0
5.9
1.0
13
17
Unit
Unit
kV
°C
°C
°C
mA
pF
pF
W
V
V
V