LMC662AIM National Semiconductor, LMC662AIM Datasheet - Page 2

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LMC662AIM

Manufacturer Part Number
LMC662AIM
Description
IC OP AMP DUAL CMOS 8-SOIC
Manufacturer
National Semiconductor
Datasheet

Specifications of LMC662AIM

Amplifier Type
General Purpose
Number Of Circuits
2
Output Type
Rail-to-Rail
Slew Rate
1.1 V/µs
Gain Bandwidth Product
1.4MHz
Current - Input Bias
0.002pA
Voltage - Input Offset
1000µV
Current - Supply
750µA
Current - Output / Channel
40mA
Voltage - Supply, Single/dual (±)
4.75 V ~ 15.5 V, ±2.38 V ~ 7.75 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
-3db Bandwidth
-
Other names
*LMC662AIM

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Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
DC Electrical Characteristics
Differential Input Voltage
Supply Voltage (V
Output Short Circuit to V
Output Short Circuit to V
Lead Temperature
Storage Temp. Range
Voltage at Input/Output Pins
Current at Output Pin
Current at Input Pin
Current at Power Supply Pin
Input Offset Voltage
Input Offset Voltage
Average Drift
Input Bias Current
Input Offset Current
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common-Mode
Voltage Range
Large Signal
Voltage Gain
Unless otherwise specified, all limits guaranteed for T
V
(Soldering, 10 sec.)
= 0V, V
Parameter
CM
= 1.5V, V
+
− V
)
+
O
= 2.5V and R
0V ≤ V
V
5V ≤ V
V
0V ≤ V
V
For CMRR ≥ 50 dB
R
Sourcing
Sinking
R
Sourcing
Sinking
+
O
+
L
L
(V
= 15V
= 5V & 15V
= 2 kΩ (Note 5)
= 600Ω (Note 5)
= 2.5V
+
Conditions
) +0.3V, (V
CM
+
−65˚C to +150˚C
±
≤ 15V
≤ −10V
L
Supply Voltage
≤ 12.0V
>
1M unless otherwise specified.
(Note 3)
(Note 12)
(Note 1)
±
) −0.3V
±
18 mA
35 mA
260˚C
5 mA
16V
J
= 25˚C. Boldface limits apply at the temperature extremes. V
2
V
(Note 4)
0.002
0.001
+
2000
1000
−0.4
Typ
500
250
1.3
>
Operating Ratings
83
83
94
− 1.9
1
Power Dissipation
Junction Temperature
ESD Tolerance (Note 8)
Temperature Range
Supply Voltage Range
Power Dissipation
Thermal Resistance (θ
1
LMC662AI
LMC662C
8-Pin Molded DIP
8-Pin SO
LMC662AI
V
V
(Note 4)
Limit
+
+
−0.1
440
400
180
120
220
200
100
3.3
70
68
70
68
84
83
60
− 2.3
− 2.5
3
4
2
0
JA
) (Note 11)
(Note 3)
LMC662C
V
V
(Note 4)
+
+
Limit
−0.1
300
200
150
100
6.3
63
62
63
62
74
73
90
80
50
40
− 2.3
− 2.4
6
2
1
0
−40˚C ≤ T
0˚C ≤ T
4.75V to 15.5V
J
J
(Note 10)
101˚C/W
165˚C/W
(Note 2)
≤ +85˚C
≤ +70˚C
TeraΩ
1000V
Units
µV/˚C
V/mV
V/mV
V/mV
V/mV
+
150˚C
max
max
max
max
min
min
min
min
min
min
min
min
mV
pA
pA
dB
dB
dB
= 5V,
V
V

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