LF412CN/NOPB National Semiconductor, LF412CN/NOPB Datasheet - Page 3
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LF412CN/NOPB
Manufacturer Part Number
LF412CN/NOPB
Description
IC OP AMP DUAL LOW JFET IN 8-DIP
Manufacturer
National Semiconductor
Series
BI-FET II™r
Specifications of LF412CN/NOPB
Amplifier Type
J-FET
Number Of Circuits
2
Slew Rate
15 V/µs
Gain Bandwidth Product
4MHz
Current - Input Bias
50pA
Voltage - Input Offset
1000µV
Current - Supply
3.6mA
Voltage - Supply, Single/dual (±)
10 V ~ 36 V, ±5 V ~ 18 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Bandwidth
4 MHz
Channel Separation
-120
Common Mode Rejection Ratio
100
Current, Input Bias
50 pA
Current, Input Offset
25 pA
Current, Output
25 mA
Current, Supply
3.6 mA
Harmonic Distortion
0.02 %
Impedance, Thermal
115 °C/W
Number Of Amplifiers
Dual
Package Type
DIP-8
Power Dissipation
670 mW
Resistance, Input
10^12 Ohms
Temperature, Operating, Range
0 to +70 °C
Voltage, Gain
200 V/mV
Voltage, Input
10 to 45 V
Voltage, Noise
25 nV/sqrt Hz
Voltage, Offset
1 mV
Voltage, Output, High
13.5 V
Voltage, Output, Low
-13.5 V
Voltage, Supply
±15 V
Number Of Channels
2
Voltage Gain Db
106.02 dB
Common Mode Rejection Ratio (min)
70 dB
Input Voltage Range (max)
45 V
Input Voltage Range (min)
10 V
Input Offset Voltage
3 mV at +/- 15 V
Supply Current
6.5 mA at +/- 15 V
Maximum Power Dissipation
670 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
Maximum Dual Supply Voltage
+/- 18 V
Minimum Operating Temperature
0 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
Current - Output / Channel
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*LF412CN
*LF412CN/NOPB
LF412
LF412CN
*LF412CN/NOPB
LF412
LF412CN
THD
e
i
n
Symbol
n
AC Electrical Characteristics
(Note 7)
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: Any of the amplifier outputs can be shorted to ground indefintely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 5: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θ
Note 6: These devices are available in both the commercial temperature range 0˚C≤T
temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an “M”
indicates the military temperature range. The military temperature range is available in “H” package only. In all cases the maximum operating temperature is limited
by internal junction temperature T
Note 7: Unless otherwise specified, the specifications apply over the full temperature range and for V
I
Note 8: The LF412A is 100% tested to this specification. The LF412 is sample tested on a per amplifier basis to insure at least 85% of the amplifiers meet this
specification.
Note 9: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
recommended if input bias current is to be kept to a minimum.
Note 10: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. V
=
Note 11: Refer to RETS412X for LF412MH and LF412MJ military specifications.
Note 12: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate
outside guaranteed limits.
Note 13: Human body model, 1.5 kΩ in series with 100 pF.
Typical Performance Characteristics
B
, and I
±
6V to
OS
±
15V.
Total Harmonic Dist
Equivalent Input Noise
Voltage
Equivalent Input Noise
Current
are measured at V
Parameter
Input Bias Current
CM
=0.
j
max.
A
V
BW=20 Hz-20 kHz
T
f=1 kHz
T
A
A
V
O
=25˚C, R
=25˚C, f=1 kHz
=+10, R
=20 Vp-p,
D
Conditions
. T
00565610
j
=T
L
=10k,
S
(Continued)
A
=100Ω,
+θ
jA
P
D
where θ
4
jA
is the thermal resistance from junction to ambient. Use of a heat sink is
Min
A
≤70˚C and the military temperature range −55˚C≤T
LF412A
≤0.02
0.01
Typ
25
S
=
±
20V for the LF412A and for V
Max
Input Bias Current
jA
.
Min
LF412
≤0.02
0.01
Typ
25
S
=
±
15V for the LF412. V
Max
00565611
j
. Due to limited
A
≤125˚C. The
Units
%
OS
S
,