DF2315VTE25 Renesas Electronics America, DF2315VTE25 Datasheet - Page 605
DF2315VTE25
Manufacturer Part Number
DF2315VTE25
Description
MCU 3V 384K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2315VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2315VTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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17.4
17.4.1
The H8S/2318 F-ZTAT, H8S/2317 F-ZTAT, H8S/2315 F-ZTAT, and H8S/2314 F-ZTAT have
384, 256, 128 kbytes of on-chip flash memory. The features of the flash memory are summarized
below.
• Four flash memory operating modes
• Programming/erase methods
• Programming/erase times
• Reprogramming capability
• On-board programming modes
• Automatic bit rate adjustment
• Flash memory emulation by RAM *
• Protect modes
⎯ Program mode
⎯ Erase mode
⎯ Program-verify mode
⎯ Erase-verify mode
The flash memory is programmed 128 bytes at a time. Erasing is performed by block erase (in
single-block units). To erase the entire flash memory, the individual blocks must be erased
sequentially. Block erasing can be performed as required on 4-kbyte, 32-kbyte, and 64-kbyte
blocks.
The flash memory programming time is 10.0 ms (typ.) for simultaneous 128-byte
programming, equivalent to 78 μs (typ.) per byte, and the erase time is 50 ms (typ.).
The flash memory can be reprogrammed a minimum of 100 times.
There are two modes in which flash memory can be programmed/erased/verified on-board:
⎯ Boot mode
⎯ User program mode
With data transfer in boot mode, the bit rate of the chip can be automatically adjusted to match
the transfer bit rate of the host.
Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates
in real time.
There are three protect modes, hardware, software, and error protect, which allow protected
status to be designated for flash memory program/erase/verify operations.
Features
Overview of Flash Memory (H8S/2318 F-ZTAT, H8S/2317 F-ZTAT,
H8S/2315 F-ZTAT, H8S/2314 F-ZTAT)
Rev.7.00 Feb. 14, 2007 page 571 of 1108
REJ09B0089-0700
Section 17 ROM
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