HD6473837H Renesas Electronics America, HD6473837H Datasheet - Page 130
HD6473837H
Manufacturer Part Number
HD6473837H
Description
IC H8 MCU OTP 60K 100QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Lr
Datasheet
1.HD6473837HV.pdf
(562 pages)
Specifications of HD6473837H
Core Processor
H8/300L
Core Size
8-Bit
Speed
5MHz
Connectivity
SCI
Peripherals
LCD, PWM
Number Of I /o
84
Program Memory Size
60KB (60K x 8)
Program Memory Type
OTP
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 12x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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6.3
The write, verify, and other modes are selected as shown in table 6.3 in H8/3834 PROM mode.
Table 6.3
Mode
Write
Verify
Programming disabled
Notation:
L:
H:
V
V
The specifications for writing and reading the on-chip PROM are identical to those for the
standard HN27C256 EPROM.
6.3.1
An efficient, high-performance programming method is available for writing and verifying the
PROM data. This method achieves high speed without voltage stress on the device and without
lowering the reliability of written data. H'FF data is written in unused address areas.
The basic flow of this high-performance programming method is shown in figure 6.4. Table 6.4
and table 6.5 give the electrical characteristics in programming mode. Figure 6.5 shows a
write/verify timing diagram.
PP
CC
: V
: V
Low level
High level
PP
CC
level
level
H8/3834 Programming
Writing and Verifying
Mode Selection in H8/3834 PROM Mode
CE
L
H
H
OE
H
L
H
Pin
V
V
V
V
PP
PP
PP
PP
V
V
V
V
CC
CC
CC
CC
EO
Data input
Data output
High impedance
7
to EO
0
EA
Address input
Address input
Address input
14
to EA
0
113
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