ST10F271Z1T3 STMicroelectronics, ST10F271Z1T3 Datasheet - Page 133
ST10F271Z1T3
Manufacturer Part Number
ST10F271Z1T3
Description
MCU 16BIT 128KBIT FLASH 144-TQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet
1.ST10F271Z1Q3.pdf
(185 pages)
Specifications of ST10F271Z1T3
Core Processor
ST10
Core Size
16-Bit
Speed
40MHz
Connectivity
CAN, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
12K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ST10F271Z1T3
Manufacturer:
STMicroelectronics
Quantity:
10 000
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ST10F271Z1
25
25.1
Table 60.
Note:
Symbol
V
V
V
ESD
V
I
AGND
T
AREF
V
STBY
I
TOV
OV
DD
ST
IO
Voltage on V
Voltage on V
Voltage on V
Voltage on V
Voltage on any pin with respect to ground (V
Input current on any pin during overload condition
Absolute sum of all input currents during overload condition
Storage temperature
ESD Susceptibility (Human Body Model)
Absolute maximum ratings
Electrical characteristics
Absolute maximum ratings
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability. During overload conditions (V
voltage on pins with respect to ground (V
Absolute Maximum Ratings.
During Power-on and Power-off transients (including Standby entering/exiting phases), the
relationships between voltages applied to the device and the main V
respected. In particular power-on and power-off of V
transient, in order to avoid undesired current injection through the on-chip protection diodes.
AREF
AGND
DD
STBY
pins with respect to ground (V
pin with respect to ground (V
pins with respect to ground (V
pins with respect to ground (V
Parameter
SS
SS
SS
)
SS
SS
) must not exceed the values defined by the
)
SS
)
)
)
AREF
shall be coherent with V
-0.5 to V
Electrical characteristics
-0.5 to +6.5
-0.5 to +6.5
-65 to +150
-0.3 to V
IN
> V
Values
DD
| 75 |
2000
± 10
V
SS
DD
DD
shall be always
or V
DD
+ 0.5
IN
< V
DD
SS
) the
133/185
Unit
mA
mA
°C
V
V
V
V
V
V
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